PartNumber | STGW60H65DFB | STGW60H60DLFB | STGW60H65DF |
Description | IGBT Transistors 600V 60A trench gate field-stop IGBT | IGBT Transistors 600V 60A trench gate field-stop IGBT | IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | TO-247-3 | TO-247 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 600 V | 650 V |
Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | 2.1 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 80 A | 80 A | 120 A |
Pd Power Dissipation | 375 W | 375 W | 360 W |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Series | STGW60H65DFB | STGW60H60DLFB | STGW60H65DF |
Packaging | Tube | Tube | Tube |
Continuous Collector Current Ic Max | 60 A | 60 A | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 nA | 250 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 1.340411 oz | 1.340411 oz | 0.229281 oz |