STGW60H65DRF

Mfr. #:: STGW60H65DRF
Manufacturer:: STMicroelectronics
Description:: IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
Lifecycle:: New from this manufacturer.
Datasheet:: STGW60H65DRF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STGW60H65DRF more Information STGW60H65DRF Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-247

Mounting Style:: SMD/SMT

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.9 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 120 A

Pd - Power Dissipation:: 360 W

Series:: STGW60H65DRF

Packaging:: Tube

Brand:: STMicroelectronics

Gate-Emitter Leakage Current:: 250 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 600

Subcategory:: IGBTs

Unit Weight:: 0.229281 oz

Tags: STGW60H65D, STGW60H65, STGW60H, STGW6, STGW, STG

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We provide 90-360 days warranty.

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STGW60H65DRF Ratings and Reviews

A***o

Got it fast. Took for hours on gris. I will add a review after the tests in the assembled product.

2019-06-08

M***k

very goodthanks

2019-05-18

STGW60H65DRF Description

***ical: Trans IGBT Chip N-CH 650V 120A 420000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW60H65DRF Series 650 V 120 A Field Stop Trench Gate IGBT - TO-247

***icroelectronics: 60 A, 650 V field stop trench gate IGBT with Ultrafast diode

***icroelectronics: Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

***ical: Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 469W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pin

***ical: Trans IGBT Chip N-CH 600V 120A 600000mW 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: FGH60N60SMD Series 600 V 60 A Through Hole Field Stop IGBT - TO-247-3

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***nell: IGBT,N CH,FAST,W/DIO,600V,120A,TO247; Transistor Type:IGBT; DC Collector Current:120A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:600W

***ark: 650 V, 75 A Field Stop Trench Igbt/Tube |Fairchild Semiconductor FGH75T65SHDTL4

***nell: IGBT, SINGLE, N-CH, 650V, 150A, TO-247-4; DC Collector Current: 150A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 455W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube

***ineon SCT: Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS

***ark: Igbt, Single, 650V, 120A, To-247; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW75N65H5XKSA1

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ure Electronics: FGH75T65UPD Series 650 V 150 A 375 W Field Stop Trench IGBT - TO-247-3

***Yang: Trans IGBT Chip N-CH 650V 150A 3-Pin(3+Tab) TO-247AB Tube - Rail/Tube

***r Electronics: Insulated Gate Bipolar Transistor, 150A I(C), 650V V(BR)CES, N-Channel, TO-247

***emi: 650V, 75A, Field Stop Trench IGBT

*** Electronics: IGBT Transistors 650V 150A 187W

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power generator where low conduction and switching losses are essential.

***ical: Trans IGBT Chip N-CH 650V 90A 395000mW 3-Pin(3+Tab) TO-247 Tube

***nell: IGBT, SINGLE, 650V, 90A, TO-247; DC Collector Current: 90A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 395W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins

***ineon SCT: High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO247-3, RoHS

***ark: Igbt, 650V, 90A, 175Deg C, 395W; Continuous Collector Current:90A; Collector Emitter Saturation Voltage:1.65V; Power Dissipation:395W; Collector Emitter Voltage Max:650V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IKW75N65EH5XKSA1

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

STGW60H65DRF More Information

STGW60H65 Field Stop Trench Gate IGBTs: STMicroelectronics STGW60H65 Field Stop Trench Gate IGBTs are the first IGBTs feature an advanced proprietary trench gate and field stop structure. An optimized compromise between conduction and switching losses results in maximum efficiency. A very tight parameter distribution and VCE(sat) temperature coefficient slight positive makes it easier to parallel devices. The STGW60H65 comes in three different versions, one without an anti-parallel diode, one with a fast soft recovery, and one with an ultrafast soft recovery.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
STGW60H65DRF DISTI # V36:1790_06560782	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant	0
STGW60H65DRF DISTI # 497-13166-ND	STMicroelectronics	IGBT 650V 120A 420W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	319In Stock	510:$6.1194 120:$7.0274 30:$8.0933 10:$8.4880 1:$9.4000
STGW60H65DRF DISTI # STGW60H65DRF	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube (Alt: STGW60H65DRF) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€2.2900 500:€2.4900 100:€2.5900 50:€2.6900 25:€2.7900 10:€2.8900 1:€3.1900
STGW60H65DRF DISTI # STGW60H65DRF	STMicroelectronics	Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-247 Tube - Rail/Tube (Alt: STGW60H65DRF) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	6000:$4.7900 3600:$4.8900 2400:$5.0900 1200:$5.2900 600:$5.5900
STGW60H65DRF DISTI # 43W6511	STMicroelectronics	PTD HIGH VOLTAGE	0	500:$4.8900 250:$5.0400 100:$6.0200 50:$6.4700 25:$6.9200 10:$7.6000 1:$8.4600
STGW60H65DRF DISTI # 511-STGW60H65DRF	STMicroelectronics	IGBT Transistors 60A 650V Field Stop Trench Gate IBGT RoHS: Compliant	758	1:$8.9400 10:$8.0800 25:$7.7000 100:$6.6900 250:$6.3900 500:$5.8200 1000:$5.0700
STGW60H65DRF	STMicroelectronics		239
STGW60H65DRF DISTI # IGBT1341	STMicroelectronics	IGBT650V120A1.9VTO247-3	Stock DE - 0Stock HK - 0Stock US - 0	600:$3.0000
STGW60H65DRF DISTI # STGW60H65DRF	STMicroelectronics	650V 120A 420W TO247 RoHS: Not Compliant	20	5:€3.2000 30:€2.8000 120:€2.6000 300:€2.5000
STGW60H65DRF	STMicroelectronics	60 A, 650 V field stop trench gate IGBT with Ultrafast diode	193	1:$2.7300 100:$2.4900 500:$2.1900 1000:$2.1900

STGW60H65DRF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

A***o

M***k

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes