PartNumber | STGW60H65DFB | STGW60H65DF | STGW60H65DFB-4 |
Description | IGBT Transistors 600V 60A trench gate field-stop IGBT | IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Package / Case | TO-247-3 | TO-247 | TO-247-4 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
Collector Emitter Saturation Voltage | 1.6 V | 2.1 V | 1.6 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 80 A | 120 A | 80 A |
Pd Power Dissipation | 375 W | 360 W | 283 W |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Series | STGW60H65DFB | STGW60H65DF | STGW60H65DFB-4 |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 60 A | - | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Gate Emitter Leakage Current | 250 nA | - | 250 uA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 1.340411 oz | 0.229281 oz | - |