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| PartNumber | STGW60H65DFB | STGW60H65DF | STGW60H65DFB-4 |
| Description | IGBT Transistors 600V 60A trench gate field-stop IGBT | IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Package / Case | TO-247-3 | TO-247 | TO-247-4 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.6 V | 2.1 V | 1.6 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 80 A | 120 A | 80 A |
| Pd Power Dissipation | 375 W | 360 W | 283 W |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Series | STGW60H65DFB | STGW60H65DF | STGW60H65DFB-4 |
| Packaging | Tube | Tube | - |
| Continuous Collector Current Ic Max | 60 A | - | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | - | 250 uA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 600 | 600 | 600 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 1.340411 oz | 0.229281 oz | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STGW60H65DFB | IGBT Transistors 600V 60A trench gate field-stop IGBT | |
| STGW60H65DF | IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT | ||
| STGW60H65DFB-4 | IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed | ||
| STGW60H65DFB | IGBT 650V 80A 375W TO-247 | ||
| STGW60H65DF | IGBT 650V 120A 360W TO247 | ||
| STGW60H65DFB-4 | PTD HIGH VOLTAGE (Alt: STGW60H65DFB-4) |