PartNumber | STI100N10F7 | STI10NM60N | STI10N62K3 |
Description | MOSFET | MOSFET N-CH 600V 0.53Ohm 10A Mdmesh II | MOSFET N-CH 620V 8.4A I2PAK |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
Technology | Si | Si | - |
Series | STI100N10F7 | STI10NM60N | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
RoHS | - | Y | - |
Mounting Style | - | Through Hole | - |
Package / Case | - | TO-262-3 | - |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 650 V | - |
Id Continuous Drain Current | - | 10 A | - |
Rds On Drain Source Resistance | - | 550 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Vgs Gate Source Voltage | - | 25 V | - |
Qg Gate Charge | - | 19 nC | - |
Minimum Operating Temperature | - | - 50 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 70 W | - |
Configuration | - | Single | - |
Packaging | - | Tube | - |
Transistor Type | - | 1 N-Channel | - |
Fall Time | - | 15 ns | - |
Rise Time | - | 12 ns | - |
Typical Turn Off Delay Time | - | 32 ns | - |
Typical Turn On Delay Time | - | 10 ns | - |
Unit Weight | - | 0.050717 oz | - |