PartNumber | STI35N65M5 | STI360N4F6 | STI400N4F6 |
Description | MOSFET Nchannel 650 V 0.085 Ohm, 27 A, MDmesh | MOSFET N-channel 40 V 120 A STripFET Pwr MOSFET | MOSFET N-CH 40V 120A I2PAK |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-262-3 | TO-262-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 40 V | - |
Id Continuous Drain Current | 27 A | 120 A | - |
Rds On Drain Source Resistance | 98 mOhms | 1.8 mOhms | - |
Vgs Gate Source Voltage | 25 V | 20 V | - |
Qg Gate Charge | 83 nC | 340 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 175 C | - |
Pd Power Dissipation | 160 W | 300 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | - |
Series | STI35N65M5 | STI360N4F6 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 16 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 12 ns | - | - |
Factory Pack Quantity | 50 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 60 ns | - | - |
Unit Weight | 0.050717 oz | 0.050717 oz | - |
Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
Qualification | - | AEC-Q101 | - |