PartNumber | STI33N65M2 | STI33N60M2 | STI32N65M5 |
Description | MOSFET N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in I2PAK package | MOSFET N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in I2PAK package | IGBT Transistors MOSFET Nchannel 650 V 0.095 Ohm, 24 A, MDmesh |
Manufacturer | STMicroelectronics | STMicroelectronics | ST |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-262-3 | TO-262-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 600 V | - |
Id Continuous Drain Current | 24 A | 26 A | - |
Rds On Drain Source Resistance | 117 mOhms | 125 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 3 V | - |
Vgs Gate Source Voltage | 25 V | 25 V | - |
Qg Gate Charge | 41.5 nC | 45.5 nC | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 190 W | 190 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | MDmesh | MDmesh | - |
Packaging | Tube | Tube | - |
Series | STI33N65M2 | STI33N60M2 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 9 ns | 9 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 11.5 ns | 9.6 ns | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 72.5 ns | 109 ns | - |
Typical Turn On Delay Time | 13.5 ns | 16 ns | - |
Unit Weight | 0.050717 oz | 0.073511 oz | - |
Minimum Operating Temperature | - | - 55 C | - |