STLD128DNT

STLD128DNT4 vs STLD128DNT vs STLD128DNT4G

 
PartNumberSTLD128DNT4STLD128DNTSTLD128DNT4G
DescriptionBipolar Transistors - BJT NPN power transistor
ManufacturerSTMicroelectronicsST-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDPAK-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max400 V--
Emitter Base Voltage VEBO18 V--
Maximum DC Collector Current6 A6 A-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesSTL128DNSTLD128DN-
DC Current Gain hFE Max1010-
Height2.4 mm--
Length6.2 mm--
PackagingReelReel-
Width6.6 mm--
BrandSTMicroelectronics--
Continuous Collector Current3 A3 A-
DC Collector/Base Gain hfe Min8--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.009185 oz0.009185 oz-
Package Case-DPAK-
Pd Power Dissipation-20 W-
Collector Emitter Voltage VCEO Max-400 V-
Emitter Base Voltage VEBO-18 V-
DC Collector Base Gain hfe Min-8-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STLD128DNT4 Bipolar Transistors - BJT NPN power transistor
STLD128DNT4 Bipolar Transistors - BJT NPN power transisto
STLD128DNT New and Original
STLD128DNT4G New and Original
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