 |  | | |
| PartNumber | STP10N60M2 | STP10N60M2 10N60M2 | STP10N60C |
| Description | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | ||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 560 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 13.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 85 W | - | - |
| Configuration | Single | - | - |
| Tradename | MDmesh | - | - |
| Packaging | Tube | - | - |
| Series | STP10N60M2 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 13.2 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32.5 ns | - | - |
| Typical Turn On Delay Time | 8.8 ns | - | - |
| Unit Weight | 0.011640 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
STMicroelectronics |
STP10N60M2 | MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 | |
| STP10N60M2 | MOSFET N-CH 600V TO-220 | ||
| STP10N60M2 10N60M2 | New and Original | ||
| STP10N60C | New and Original |