STP10N60M2

Mfr. #:: STP10N60M2
Manufacturer:: STMicroelectronics
Description:: MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
Lifecycle:: New from this manufacturer.
Datasheet:: STP10N60M2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STP10N60M2 more Information STP10N60M2 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 7.5 A

Rds On - Drain-Source Resistance:: 560 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 13.5 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 85 W

Configuration:: Single

Tradename:: MDmesh

Packaging:: Tube

Series:: STP10N60M2

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Fall Time:: 13.2 ns

Product Type:: MOSFET

Rise Time:: 8 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 32.5 ns

Typical Turn-On Delay Time:: 8.8 ns

Unit Weight:: 0.011640 oz

Tags: STP10N60, STP10N6, STP10N, STP10, STP1, STP

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STP10N60M2 Description

***icroelectronics: N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 600 V 85 W 0.6 Ohm Flange Mount Power MosFet - TO-220-3

***(Formerly Allied Electronics): MOSFET N-Ch 600V 7.5A MDmesh II TO-220

***ark: MOSFET, N-CH, 600V, 7.5A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 600V, 7.5A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)

***icroelectronics: N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 600 V 600 mOhm Flange Mount MDmesh II Plus Power Mosfet -TO-220FP

***ical: Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N-CH, 600V, 7.5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:7.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ineon SCT: Single N-Channel 600 V 460 mOhm 28 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS

***ical: Trans MOSFET N-CH 600V 13.1A 3-Pin(3+Tab) TO-220FP Tube

***ark: Mosfet, N-Ch, 600V, 13.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.1A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***icroelectronics: N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220FP wide creepage package

***ure Electronics: N-Channel 600 V 600 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220FP Tube

***nell: MOSFET, N-CH, 600V, 7.5A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.55ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;

***icroelectronics: N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 650 V 0.78 Ohm Flange Mount Mdmesh II Plus Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) TO-220FP Tube

***et: CoolMOS E6 Power Transistor N-Channel 600V 9.2A 3-Pin TO-220FP

***el Electronic: Trans MOSFET N-CH 650V 9.2A 3-Pin(3+Tab) TO-220 Full-Pack

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***ineon SCT: Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS

***ow.cn: Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

STP10N60M2 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

MDmesh™ II Power MOSFETs: STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Market price

Part #	Mfg.	Description	Stock	Price
STP10N60M2 DISTI # C1S730200794505	STMicroelectronics	Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	20	1:$0.6960
STP10N60M2 DISTI # 497-13970-5-ND	STMicroelectronics	MOSFET N-CH 600V TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	1999In Stock	5000:$0.6773 2500:$0.7129 500:$0.9676 100:$1.1713 50:$1.4260 10:$1.5020 1:$1.6800
STP10N60M2 DISTI # V36:1790_06564793	STMicroelectronics	Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	2000000:$0.5650 1000000:$0.5655 200000:$0.6411 20000:$0.7990 2000:$0.8268
STP10N60M2 DISTI # STP10N60M2	STMicroelectronics	Trans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube (Alt: STP10N60M2) RoHS: Compliant Min Qty: 50 Container: Tube	Europe - 535	500:€0.6309 300:€0.6789 200:€0.7359 100:€0.8029 50:€0.9819
STP10N60M2 DISTI # STP10N60M2	STMicroelectronics	Trans MOSFET N-CH 600V 7.5A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP10N60M2) RoHS: Compliant Min Qty: 2000 Container: Tube	Americas - 0	20000:$0.6189 10000:$0.6319 6000:$0.6609 4000:$0.6919 2000:$0.7269
STP10N60M2 DISTI # 45AC7683	STMicroelectronics	MOSFET, N-CH, 600V, 7.5A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:7.5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.55ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	250	10000:$0.6270 2500:$0.6520 1000:$0.7350 500:$0.9310 100:$1.0500 10:$1.3600 1:$1.6100
STP10N60M2 DISTI # 511-STP10N60M2	STMicroelectronics	MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2 RoHS: Compliant	1995	1:$1.5900 10:$1.3500 100:$1.0400 500:$0.9220 1000:$0.7280 2000:$0.6460 10000:$0.6210
STP10N60M2 DISTI # 7863763P	STMicroelectronics	MOSFET N-CH 600V 7.5A MDMESH II TO-220, TU	1110	1000:£0.6560 500:£0.8300 250:£0.9440 50:£1.2160
STP10N60M2 DISTI # 2807275	STMicroelectronics	MOSFET, N-CH, 600V, 7.5A, TO-220AB RoHS: Compliant	750	5000:$1.0300 2500:$1.0800 500:$1.4600 100:$1.7700 50:$2.1500 5:$2.2700
STP10N60M2 DISTI # 2807275	STMicroelectronics	MOSFET, N-CH, 600V, 7.5A, TO-220AB	749	500:£0.6680 250:£0.7110 100:£0.7530 10:£1.0300 1:£1.3100
STP10N60M2 DISTI # STP10N60M2	STMicroelectronics	N-Ch+Z-Dio 600V 7,5A 85W 0,6R TO220 RoHS: Compliant	180	10:€1.0800 50:€0.7800 200:€0.6300 500:€0.6100

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STP10N60M2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes