| PartNumber | STP11NM60ND | STP11NM60N |
| Description | MOSFET N-channel 600V, 10A FDMesh II | MOSFET N-channel MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 10 A | 10 A |
| Rds On Drain Source Resistance | 450 mOhms | 370 mOhms |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 90 W | 90 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | FDmesh | - |
| Packaging | Tube | Tube |
| Height | 9.15 mm | 9.15 mm |
| Length | 10.4 mm | 10.4 mm |
| Series | STP11NM60ND | STB11NM60 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.6 mm | 4.6 mm |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 9 ns | 12 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7 ns | 18.5 ns |
| Factory Pack Quantity | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | 50 ns |
| Typical Turn On Delay Time | 16 ns | 22 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz |
| Type | - | Power MOSFET |
| Forward Transconductance Min | - | 7.5 S |