PartNumber | STP11NM60ND | STP11NM60N |
Description | MOSFET N-channel 600V, 10A FDMesh II | MOSFET N-channel MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 10 A | 10 A |
Rds On Drain Source Resistance | 450 mOhms | 370 mOhms |
Vgs Gate Source Voltage | 25 V | 25 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 90 W | 90 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Tradename | FDmesh | - |
Packaging | Tube | Tube |
Height | 9.15 mm | 9.15 mm |
Length | 10.4 mm | 10.4 mm |
Series | STP11NM60ND | STB11NM60 |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 4.6 mm | 4.6 mm |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 9 ns | 12 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 7 ns | 18.5 ns |
Factory Pack Quantity | 1000 | 50 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 50 ns | 50 ns |
Typical Turn On Delay Time | 16 ns | 22 ns |
Unit Weight | 0.011640 oz | 0.011640 oz |
Type | - | Power MOSFET |
Forward Transconductance Min | - | 7.5 S |