STP11NM60N

STP11NM60ND vs STP11NM60N

 
PartNumberSTP11NM60NDSTP11NM60N
DescriptionMOSFET N-channel 600V, 10A FDMesh IIMOSFET N-channel MOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current10 A10 A
Rds On Drain Source Resistance450 mOhms370 mOhms
Vgs Gate Source Voltage25 V25 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation90 W90 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameFDmesh-
PackagingTubeTube
Height9.15 mm9.15 mm
Length10.4 mm10.4 mm
SeriesSTP11NM60NDSTB11NM60
Transistor Type1 N-Channel1 N-Channel
Width4.6 mm4.6 mm
BrandSTMicroelectronicsSTMicroelectronics
Fall Time9 ns12 ns
Product TypeMOSFETMOSFET
Rise Time7 ns18.5 ns
Factory Pack Quantity100050
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time50 ns50 ns
Typical Turn On Delay Time16 ns22 ns
Unit Weight0.011640 oz0.011640 oz
Type-Power MOSFET
Forward Transconductance Min-7.5 S
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STP11NM60ND MOSFET N-channel 600V, 10A FDMesh II
STP11NM60N MOSFET N-channel MOSFET
STP11NM60ND MOSFET N-CH 600V 10A TO-220
STP11NM60N MOSFET N-CH 600V 10A TO-220
STP11NM60N,P11NM60N New and Original
STP11NM60N,P11NM60N, New and Original
STP11NM60N,P11NM60N,STP1 New and Original
STP11NM60N,STP11NM60FP,P New and Original
STP11NM60N/ND New and Original
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