| PartNumber | STP13N65M2 | STP13N60M2 | STP13N60DM2 |
| Description | MOSFET N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in TO-220 package | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 600 V |
| Id Continuous Drain Current | 10 A | 11 A | 11 A |
| Rds On Drain Source Resistance | 370 mOhms | 380 mOhms | 365 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 25 V | 25 V | 10 V |
| Qg Gate Charge | 17 nC | 17 nC | 19 nC |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | 110 W | 110 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Tube | Tube | - |
| Series | STP13N65M2 | STP13N60M2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 12 ns | 9.5 ns | 10.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 7.8 ns | 10 ns | 4.8 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | 41 ns | 42.5 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 12.3 ns |
| Unit Weight | 0.011640 oz | 0.011640 oz | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |