STP13N60M2

Mfr. #:: STP13N60M2
Manufacturer:: STMicroelectronics
Description:: MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2
Lifecycle:: New from this manufacturer.
Datasheet:: STP13N60M2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STP13N60M2 more Information STP13N60M2 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-220-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 650 V

Id - Continuous Drain Current:: 11 A

Rds On - Drain-Source Resistance:: 380 mOhms

Vgs th - Gate-Source Threshold Voltage:: 3 V

Vgs - Gate-Source Voltage:: 25 V

Qg - Gate Charge:: 17 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 110 W

Configuration:: Single

Tradename:: MDmesh

Packaging:: Tube

Series:: STP13N60M2

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Fall Time:: 9.5 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 41 ns

Typical Turn-On Delay Time:: 11 ns

Unit Weight:: 0.011640 oz

Tags: STP13N60, STP13N6, STP13N, STP13, STP1, STP

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

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Packaging Boxes

STP13N60M2 Description

***icroelectronics: N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package

***ure Electronics: STP13N60M2 Series N-Channel 600V 380 mOhm MDmesh II Plus Power Mosfet - TO-220-3

***ark: MOSFET, N-CH, 600V, 11A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package

***ical: Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube

***ure Electronics: N-Channel 600 V 380 mO 17 nC Flange Mount MDmesh II Plus Mosfet - TO220FP

***enic: 600V 11A 380m´Î@10V5.5A 25W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ark: MOSFET, N-CH, 600V, 11A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***icroelectronics: N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N-CH, 600V, 13A, TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-220FP package

***ure Electronics: N-Channel 600 V 280 mOhm Flange Mount MDmesh II Plus Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube

***enic: 600V 13A 280m´Î@10V6.5A 25W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***ark: MOSFET, N-CH, 600V, 13A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:13A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ure Electronics: Single N-Channel 600 V 280 mOhm 25.5 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220FP Tube

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 600V, 13.8A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.8A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.252ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ure Electronics: N-Channel 600 V 7 A 330 mO 22 nC CoolMOS P6 Power Transistor - TO-220FP

***ical: Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220FP Tube

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.8pF 50volts C0G +/-0.5pF

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO220-3, RoHS

***ark: MOSFET, N-CH, 600V, 12A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.297ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***ical: Trans MOSFET N-CH 600V 13.8A 3-Pin(3+Tab) TO-220 Full-Pack

***ark: Mosfet, N-Ch, 600V, 13.8A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.8A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

STP13N60M2 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

MDmesh™ II Power MOSFETs: STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Market price

Part #	Mfg.	Description	Stock	Price
STP13N60M2 DISTI # V36:1790_06564862	STMicroelectronics	Trans MOSFET N-CH 600V 12A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	1000000:$0.8911 500000:$0.8914 100000:$0.9193 10000:$0.9695 1000:$0.9780
STP13N60M2 DISTI # 497-13842-5-ND	STMicroelectronics	MOSFET N-CH 600V 11A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	1000In Stock	5000:$1.0442 2500:$1.0844 500:$1.4057 100:$1.7109 50:$2.0082 10:$2.1290 1:$2.3700
STP13N60M2 DISTI # STP13N60M2	STMicroelectronics	Trans MOSFET N-CH 600V 11A 3-Pin TO-220 Tube (Alt: STP13N60M2) RoHS: Compliant Min Qty: 50 Container: Tube	Europe - 0	500:€0.6679 300:€0.7149 200:€0.7699 100:€0.8349 50:€1.0019
STP13N60M2 DISTI # STP13N60M2	STMicroelectronics	Trans MOSFET N-CH 600V 11A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP13N60M2) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$0.9769 6000:$0.9969 4000:$1.0429 2000:$1.0919 1000:$1.1459
STP13N60M2 DISTI # 45AC7691	STMicroelectronics	Trans MOSFET N-CH 600V 11A 3-Pin TO-220 Tube - Bulk (Alt: 45AC7691) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	2500:$1.1500 1000:$1.2200 500:$1.4400 100:$1.6200 10:$2.0000 1:$2.3300
STP13N60M2 DISTI # 45AC7691	STMicroelectronics	MOSFET, N-CH, 600V, 11A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.35ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	224	1000:$0.8970 2500:$0.8970 1:$0.9780 10:$0.9780 100:$0.9780 500:$0.9780
STP13N60M2 DISTI # 511-STP13N60M2	STMicroelectronics	MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 RoHS: Compliant	90	1:$2.2500 10:$1.9100 100:$1.5300 500:$1.3300 1000:$1.1100 2000:$1.0300 5000:$0.9950
STP13N60M2 DISTI # TMOSP11435	STMicroelectronics	N-CH 600V 11A 380mOhmTO220-3 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	1000:$0.8430
STP13N60M2 DISTI # 2807280	STMicroelectronics	MOSFET, N-CH, 600V, 11A, TO-220AB	995	500:£1.0100 250:£1.0900 100:£1.1700 10:£1.4700 1:£1.9400
STP13N60M2 DISTI # 2807280	STMicroelectronics	MOSFET, N-CH, 600V, 11A, TO-220AB RoHS: Compliant	995	5000:$1.6200 2500:$1.6400 500:$2.1200 100:$2.5800 50:$3.0300 5:$3.2100

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	Mfr.#: STPS20200CFP OMO.#: OMO-STPS20200CFP	Schottky Diodes & Rectifiers 200V Schottky DC DC 45pF TO220PF 2000V
	Mfr.#: GCJ188R71H104KA12D OMO.#: OMO-GCJ188R71H104KA12D	Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 50volts 0.1uF X7R 10% Soft Term
	Mfr.#: CC0603KRX5R8BB105 OMO.#: OMO-CC0603KRX5R8BB105	Multilayer Ceramic Capacitors MLCC - SMD/SMT 1.0uF 25V X5R 10%
	Mfr.#: CC0805KRX7R9BB104 OMO.#: OMO-CC0805KRX7R9BB104	Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
	Mfr.#: GRM21BC71E106KE11L OMO.#: OMO-GRM21BC71E106KE11L-MURATA-ELECTRONICS	Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 10uF 25volts X7S + - 10%
	Mfr.#: GCJ188R71H104KA12D OMO.#: OMO-GCJ188R71H104KA12D-MURATA-ELECTRONICS	Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 50volts 0.1uF X7R 10% Soft Term
	Mfr.#: CC0603KRX5R8BB105 OMO.#: OMO-CC0603KRX5R8BB105-YAGEO	Multilayer Ceramic Capacitors MLCC - SMD/SMT 1.0uF 25V X5R 10%
	Mfr.#: ZRB18AR61E106ME01L OMO.#: OMO-ZRB18AR61E106ME01L-MURATA-ELECTRONICS	Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 10uF 25volts X5R +/-20% Soft Term
	Mfr.#: CC0805KRX7R9BB104 OMO.#: OMO-CC0805KRX7R9BB104-YAGEO	Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%

STP13N60M2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes