PartNumber | STP13NM60N | STP13NM60ND | STP13NM50N |
Description | MOSFET N-Ch 600 Volt 11 Amp Power MDmesh | MOSFET N-CH 600V 0.32Ohm 11A FDMesh II | MOSFET N Ch 600V 8A Pwr MESH IGBT |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | N |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 500 V |
Id Continuous Drain Current | 11 A | 11 A | 12 A |
Rds On Drain Source Resistance | 360 mOhms | 380 mOhms | 320 mOhms |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 90 W | 109 W | 100 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | MDmesh | - | - |
Packaging | Tube | Tube | - |
Series | STP13NM60N | STP13NM60ND | STB13N |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 10 ns | 15.4 ns | 10 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 10 ns | 15 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 30 ns | 9.6 ns | 40 ns |
Typical Turn On Delay Time | 3 ns | 46.5 ns | 30 ns |
Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Qg Gate Charge | - | 24.5 nC | - |
Height | - | - | 9.15 mm |
Length | - | - | 10.4 mm |
Width | - | - | 4.6 mm |