PartNumber | STP18N60DM2 | STP18N55M5 | STP18N60M2 |
Description | MOSFET N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 package | MOSFET N-Ch 550V 0.18 Ohm 13A Mdmesh M5 | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 550 V | 600 V |
Id Continuous Drain Current | 12 A | 13 A | 13 A |
Rds On Drain Source Resistance | 260 mOhms | 240 mOhms | 255 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - | 3 V |
Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
Qg Gate Charge | 20 nC | 31 nC | 21.5 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 90 W | 90 W | 110 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Series | STP18N60DM2 | STP18N55M5 | STP18N60M2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Forward Transconductance Min | - | - | - |
Fall Time | 32.5 ns | 13 ns | 10.6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8 ns | 9.5 ns | 9 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 9.5 ns | 29 ns | 47 ns |
Typical Turn On Delay Time | 13.5 ns | - | 12 ns |
Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
Tradename | - | MDmesh | - |
Packaging | - | Tube | Tube |