STP18N60M6

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

13 A

Rds On - Drain-Source Resistance:

280 mOhms

Vgs th - Gate-Source Threshold Voltage:

3.25 V

Vgs - Gate-Source Voltage:

25 V

Qg - Gate Charge:

16.8 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

110 W

Configuration:

Single

Channel Mode:

Enhancement

Transistor Type:

1 N-Channel

Brand:

STMicroelectronics

Fall Time:

9 ns

Product Type:

MOSFET

Rise Time:

7 ns

Factory Pack Quantity:

1000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

28 ns

Typical Turn-On Delay Time:

16 ns

Tags

STP18N60M, STP18N60, STP18N6, STP18N, STP18, STP1, STP