PartNumber | TK31N60W5,S1VF | TK31N60X,S1F | TK31V60W,LVQ |
Description | MOSFET MOSFET NChtrr135ns 0.082ohm DTMOS | MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) | MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Package / Case | TO-247-3 | TO-247-3 | DFN8x8-5 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Id Continuous Drain Current | 30.8 A | 30.8 A | 30.8 A |
Rds On Drain Source Resistance | 82 mOhms | 73 mOhms | 78 mOhms |
Vgs th Gate Source Threshold Voltage | 4.5 V | 3.5 V | 3.7 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 105 nC | 65 nC | 86 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 230 W | 230 W | 240 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | DTMOSIV | DTMOSIV | DTMOSIV |
Height | 20.95 mm | 20.95 mm | 0.85 mm |
Length | 15.94 mm | 15.94 mm | 8 mm |
Series | TK31N60W | TK31N60X | TK31V60W |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.02 mm | 5.02 mm | 8 mm |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 30 | 30 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 1.340411 oz | 1.340411 oz | - |
Packaging | - | Reel | Reel |
Fall Time | - | 6 ns | 8.5 ns |
Rise Time | - | 22 ns | 32 ns |
Typical Turn Off Delay Time | - | 130 ns | 165 ns |
Typical Turn On Delay Time | - | 55 ns | 70 ns |