PartNumber | TK33S10N1Z,LQ | TK34A10N1,S4X | TK32E12N1,S1X |
Description | MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK | MOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100V | MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | TO-252-3 | TO-220FP-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 120 V |
Id Continuous Drain Current | 33 A | 34 A | 60 A |
Rds On Drain Source Resistance | 9.7 mOhms | 7.9 mOhms | 11 mOhms |
Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
Configuration | Single | Single | Single |
Packaging | Reel | - | Reel |
Height | 2.3 mm | 15 mm | 15.1 mm |
Length | 6.5 mm | 10 mm | 10.16 mm |
Series | TK33S10N1Z | TK34A10N1 | TK32E12N1 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.5 mm | 4.5 mm | 4.45 mm |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2000 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.139332 oz | 0.211644 oz | 0.211644 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V | 4 V |
Qg Gate Charge | - | 38 nC | 34 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 35 W | 98 W |
Channel Mode | - | Enhancement | Enhancement |
Fall Time | - | - | 14 ns |
Rise Time | - | - | 14 ns |
Typical Turn Off Delay Time | - | - | 43 ns |
Typical Turn On Delay Time | - | - | 33 ns |