VN2210N3

VN2210N3-G vs VN2210N3 vs VN2210N3-G P002

 
PartNumberVN2210N3-GVN2210N3VN2210N3-G P002
DescriptionMOSFET 100V 0.35OhmMOSFET 100V 0.35OhmRF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochip-Microchip Technology
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current1.2 A--
Rds On Drain Source Resistance4 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation1 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingBulk-Reel
Height5.33 mm--
Length5.21 mm--
Transistor Type1 N-Channel-1 N-Channel
TypeFET--
Width4.19 mm--
BrandMicrochip Technology--
Fall Time30 ns-30 ns
Product TypeMOSFET--
Rise Time10 ns-10 ns
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time50 ns-50 ns
Typical Turn On Delay Time10 ns-10 ns
Unit Weight0.015873 oz-0.016000 oz
Package Case--TO-92-3
Pd Power Dissipation--1 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--1.2 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--500 mOhms
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
VN2210N3-G MOSFET 100V 0.35Ohm
VN2210N3 MOSFET 100V 0.35Ohm
VN2210N3-G MOSFET N-CH 100V 1.2A TO92-3
VN2210N3-G P002 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P014 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P003 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P005 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VN2210N3-G P013 RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
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