ZXMN10A08E6T

ZXMN10A08E6TA vs ZXMN10A08E6T vs ZXMN10A08E6TA-CUT TAPE

 
PartNumberZXMN10A08E6TAZXMN10A08E6TZXMN10A08E6TA-CUT TAPE
DescriptionMOSFET 100V N-Chnl UMOS
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-26-6--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current1.9 A--
Rds On Drain Source Resistance250 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.7 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.3 mm--
Length3.1 mm--
ProductMOSFET Small Signal--
SeriesZXMN10A--
Transistor Type1 N-Channel--
TypeMOSFET--
Width1.8 mm--
BrandDiodes Incorporated--
Forward Transconductance Min5 S--
Fall Time2.2 ns--
Product TypeMOSFET--
Rise Time2.2 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time8 ns--
Typical Turn On Delay Time3.4 ns--
Unit Weight0.000529 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN10A08E6TA MOSFET 100V N-Chnl UMOS
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ZXMN10A08E6TA-CUT TAPE New and Original
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