PartNumber | ZXMN10A08E6TA | ZXMN10A08E6T | ZXMN10A08E6TA-CUT TAPE |
Description | MOSFET 100V N-Chnl UMOS | ||
Manufacturer | Diodes Incorporated | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-26-6 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 1.9 A | - | - |
Rds On Drain Source Resistance | 250 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 7.7 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.1 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 1.3 mm | - | - |
Length | 3.1 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | ZXMN10A | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | MOSFET | - | - |
Width | 1.8 mm | - | - |
Brand | Diodes Incorporated | - | - |
Forward Transconductance Min | 5 S | - | - |
Fall Time | 2.2 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 2.2 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 8 ns | - | - |
Typical Turn On Delay Time | 3.4 ns | - | - |
Unit Weight | 0.000529 oz | - | - |