IPB80N06S407ATMA2

Mfr. #:: IPB80N06S407ATMA2
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 60V 80A D2PAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPB80N06S407ATMA2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IPB80N06S407ATMA2 Datasheet IPB80N06S407ATMA2 Datasheet (P4-P6)IPB80N06S407ATMA2 Datasheet (P7-P9)
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More Information:: IPB80N06S407ATMA2 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 80 A

Rds On - Drain-Source Resistance:: 7.1 mOhms

Configuration:: Single

Qualification:: AEC-Q101

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: IPB80N06S4

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: IPB80N06S4-07 IPB8N6S47XT SP001028672

Unit Weight:: 0.068654 oz

Tags: IPB80N06S40, IPB80N06S4, IPB80N06, IPB80N0, IPB80N, IPB8, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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Step2:
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IPB80N06S407ATMA2 Description

***ical: Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***et Europe: Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263

***ronik: MOSFET 60V 7.1mOHM AECQ TO263 RoHSconf

***Components: MOSFET N-Ch 80V 80A OptiMOS-T2 TO-263

***i-Key: MOSFET N-CH 60V 80A TO263-3

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

IPB80N06S407ATMA2 More Information

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB80N06S407ATMA2 DISTI # V72:2272_06384392	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	900	500:$0.7607 250:$0.8680 100:$0.8769 25:$1.1465 10:$1.1580 1:$1.5009
IPB80N06S407ATMA2 DISTI # V36:1790_06384392	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
IPB80N06S407ATMA2 DISTI # IPB80N06S407ATMA2-ND	Infineon Technologies AG	MOSFET N-CH 60V 80A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$0.6657
IPB80N06S407ATMA2 DISTI # 30163392	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	2000	1000:$0.5269
IPB80N06S407ATMA2 DISTI # 29561229	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	900	12:$1.5009
IPB80N06S407ATMA2 DISTI # IPB80N06S407ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S407ATMA2) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.5369 6000:$0.5459 4000:$0.5649 2000:$0.5869 1000:$0.6089
IPB80N06S407ATMA2 DISTI # IPB80N06S407ATMA2	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S407ATMA2) RoHS: Compliant Min Qty: 676 Container: Bulk	Americas - 0	6760:$0.4699 3380:$0.4779 2028:$0.4949 1352:$0.5129 676:$0.5329
IPB80N06S407ATMA2 DISTI # SP001028672	Infineon Technologies AG	Trans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: SP001028672) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€0.5019 6000:€0.5409 4000:€0.5859 2000:€0.6389 1000:€0.7819
IPB80N06S407ATMA2 DISTI # 726-IPB80N06S407ATMA	Infineon Technologies AG	MOSFET N-Ch 60V 80A D2PAK-2 RoHS: Compliant	639	1:$1.3800 10:$1.1800 100:$0.9090 500:$0.8040 1000:$0.6350 2000:$0.5630 10000:$0.5420
IPB80N06S4-07 DISTI # 726-IPB80N06S4-07	Infineon Technologies AG	MOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2 RoHS: Compliant	0
IPB80N06S407ATMA2	Infineon Technologies AG	Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	130	1000:$0.4900 500:$0.5100 100:$0.5300 25:$0.5600 1:$0.6000
IPB80N06S407ATMA2 DISTI # 8269440P	Infineon Technologies AG	MOSFET N-CH 80A 60V OPTIMOS-T2 TO263, RL	750	250:£0.4190

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Availability

Stock:: 639
On Order:: 2622
Enter Quantity:

Current price of IPB80N06S407ATMA2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.38~~; ~~$1.38~~

10: ~~$1.18~~; ~~$11.80~~

100: ~~$0.91~~; ~~$90.90~~

500: ~~$0.80~~; ~~$402.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB80N06S407ATMA2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes