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SIHB18N60E-GE3

SIHB18N60E-GE3
Mfr. #:
SIHB18N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB18N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB18N60E-GE3 DatasheetSIHB18N60E-GE3 Datasheet (P4-P6)SIHB18N60E-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIHB18N60E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
560 V
Id - Continuous Drain Current:
16 A
Rds On - Drain-Source Resistance:
380 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
46 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
179 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
24 ns
Product Type:
MOSFET
Rise Time:
24 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
51 ns
Typical Turn-On Delay Time:
17 ns
Unit Weight:
0.077603 oz
Tags
SIHB1, SIHB, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans MOSFET N-CH 600V 18A 3-Pin D2PAK
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB18N60E-GE3
DISTI # SIHB18N60E-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 18A TO263
RoHS: Not compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.7405
SIHB18N60E-GE3
DISTI # SIHB18N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 18A 3-Pin D2PAK (Alt: SIHB18N60E-GE3)
RoHS: Compliant
Min Qty: 50		Europe - 0
  • 500:€1.5900
  • 300:€1.6900
  • 200:€1.8900
  • 100:€2.2900
  • 50:€2.9900
SIHB18N60E-GE3
DISTI # SIHB18N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 18A 3-Pin D2PAK - Tape and Reel (Alt: SIHB18N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.4900
  • 10000:$1.4900
  • 2000:$1.5900
  • 4000:$1.5900
  • 1000:$1.6900
SIHB18N60E-GE3
DISTI # 78-SIHB18N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		0
  • 1000:$1.6600
  • 2000:$1.5800
  • 5000:$1.5200
Image Part # Description
SIHB18N60E-GE3

Mfr.#: SIHB18N60E-GE3

OMO.#: OMO-SIHB18N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB18N60E-GE3

Mfr.#: SIHB18N60E-GE3

OMO.#: OMO-SIHB18N60E-GE3-VISHAY

 MOSFET N-CH 600V 18A TO263
Availability
Stock:
Available
On Order:
3500
Enter Quantity:
Current price of SIHB18N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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