IGP20N60H3

Mfr. #:: IGP20N60H3
Manufacturer:: Infineon Technologies
Description:: IGBT Transistors IGBT 600V
Lifecycle:: New from this manufacturer.
Datasheet:: IGP20N60H3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.95 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 40 A

Pd - Power Dissipation:: 170 W

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 175 C

Series:: HighSpeed 3

Packaging:: Tube

Brand:: Infineon Technologies

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 500

Subcategory:: IGBTs

Tradename:: TRENCHSTOP

Part # Aliases:: IGP20N60H3XKSA1 IGP2N6H3XK SP000702544

Unit Weight:: 0.068784 oz

Tags: IGP20N60, IGP20, IGP2, IGP

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IGP20N60H3 Description

***ical: Trans IGBT Chip N=-CH 600V 40A 170000mW 3-Pin(3+Tab) TO-220AB Tube

***ment14 APAC: IGBT,600V,20A,TO220; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:170W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; Operating Temperature Range:-40°C to +175°C; Power Dissipation Max:170W

***ineon: s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding Inverters; Solar Inverters; UPS; All hard switching applications

Market price

Part #	Mfg.	Description	Stock	Price
IGP20N60H3XKSA1 DISTI # V99:2348_06383000	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	500	100:$2.0019 25:$2.1414 10:$2.3763 1:$2.9348
IGP20N60H3XKSA1 DISTI # V36:1790_06383000	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	0
IGP20N60H3XKSA1 DISTI # IGP20N60H3XKSA1-ND	Infineon Technologies AG	IGBT 600V 40A 170W TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube	Temporarily Out of Stock	500:$1.5630
IGP20N60H3XKSA1 DISTI # 26962426	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant	500	100:$2.1517 25:$2.3137 10:$2.5584 6:$2.8690
IGP20N60H3 DISTI # IGP20N60H3	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin TO-220AB Tube - Bulk (Alt: IGP20N60H3) RoHS: Not Compliant Min Qty: 343 Container: Bulk	Americas - 0	3430:$0.9269 1715:$0.9439 1029:$0.9769 686:$1.0129 343:$1.0509
IGP20N60H3 DISTI # SP000702544	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin TO-220AB Tube (Alt: SP000702544) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€0.9879 500:€1.0059 100:€1.0219 50:€1.0399 25:€1.1139 10:€1.3399 1:€1.7209
IGP20N60H3 DISTI # SP000702544	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin TO-220AB Tube (Alt: SP000702544) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	10:€1.4300 1:€1.8600
IGP20N60H3ATMA1 DISTI # IGP20N60H3ATMA1	Infineon Technologies AG	- Bulk (Alt: IGP20N60H3ATMA1) Min Qty: 253 Container: Bulk	Americas - 0	1265:$1.1900 2530:$1.1900 506:$1.2900 759:$1.2900 253:$1.3900
IGP20N60H3XKSA1 DISTI # IGP20N60H3XKSA1	Infineon Technologies AG	Trans IGBT Chip N-CH 600V 40A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IGP20N60H3XKSA1) RoHS: Compliant Min Qty: 500 Container: Tube	Americas - 0	5000:$1.0799 3000:$1.0999 2000:$1.1379 1000:$1.1809 500:$1.2249
IGP20N60H3 DISTI # 13T9412	Infineon Technologies AG	IGBT,600V,20A,TO220,DC Collector Current:20A,Collector Emitter Saturation Voltage Vce(on):2.4V,Power Dissipation Pd:170W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-RoHS Compliant: Yes	14	500:$1.4900 250:$1.6100 100:$1.7200 50:$1.8600 25:$2.0000 10:$2.1400 1:$2.5300
IGP20N60H3 DISTI # 726-IGP20N60H3X	Infineon Technologies AG	IGBT Transistors IGBT 600V RoHS: Compliant	464	1:$2.5000 10:$2.1200 100:$1.7000 500:$1.4800 1000:$1.2300 2500:$1.1400 5000:$1.1000
IGP20N60H3	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	430	1000:$0.9600 500:$1.0100 100:$1.0500 25:$1.1000 1:$1.1800
IGP20N60H3ATMA1	Infineon Technologies AG	Infineon Discrete IGBT without Anti-Parallel DiodeIGP20N60H3 - TO220 RoHS: Not Compliant	13000	1000:$1.3000 500:$1.3700 100:$1.4300 25:$1.4900 1:$1.6000
IGP20N60H3 DISTI # IGP20N60H3	Infineon Technologies AG	Transistor: IGBT,600V,20A,170W,TO220-3	156	1:$2.1400 5:$1.8600 25:$1.5300 100:$1.3500 250:$1.1700
IGP20N60H3 DISTI # 1832333	Infineon Technologies AG	IGBT,600V,20A,TO220 RoHS: Compliant	49	10:$3.2600 1:$3.8500
IGP20N60H3 DISTI # 1832333	Infineon Technologies AG	IGBT,600V,20A,TO220	15	500:£1.1600 250:£1.2400 100:£1.3300 10:£1.6700 1:£2.2100

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Availability

Stock:: 464
On Order:: 2447
Enter Quantity:

Current price of IGP20N60H3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.50~~; ~~$2.50~~

10: ~~$2.12~~; ~~$21.20~~

100: ~~$1.70~~; ~~$170.00~~

500: ~~$1.48~~; ~~$740.00~~

1000: ~~$1.23~~; ~~$1 230.00~~

2500: ~~$1.14~~; ~~$2 850.00~~

5000: ~~$1.10~~; ~~$5 500.00~~

10000: ~~$1.06~~; ~~$10 600.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IGP20N60H3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes