IPW65R080CFDFKSA1

IPW65R080CFDFKSA1
Mfr. #:
IPW65R080CFDFKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
Lifecycle:
New from this manufacturer.
Datasheet:
IPW65R080CFDFKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPW65R080CFDFKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
43.3 A
Rds On - Drain-Source Resistance:
72 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
167 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
391 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS CFD2
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
18 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
85 ns
Typical Turn-On Delay Time:
20 ns
Part # Aliases:
IPW65R080CFD IPW65R8CFDXK SP000745036
Unit Weight:
1.340411 oz
Tags
IPW65R08, IPW65R0, IPW65R, IPW65, IPW6, IPW
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPW65R080CFDFKSA1
DISTI # V99:2348_06378870
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
240
  • 100:$7.1670
  • 50:$7.4220
  • 25:$8.2460
  • 10:$8.6490
  • 1:$10.5149
IPW65R080CFDFKSA1
DISTI # V36:1790_06378870
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
  • 240000:$4.7090
  • 120000:$4.7150
  • 24000:$5.6360
  • 2400:$7.5660
  • 240:$7.9060
IPW65R080CFDFKSA1
DISTI # IPW65R080CFDFKSA1-ND
Infineon Technologies AGMOSFET N-CH 700V 43.3A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
1155In Stock
  • 720:$5.4827
  • 240:$6.2963
  • 25:$7.2512
  • 10:$7.6050
  • 1:$8.4200
IPW65R080CFDFKSA1
DISTI # 33655358
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
450
  • 3:$4.2194
IPW65R080CFDFKSA1
DISTI # 33157343
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
240
  • 2:$10.5149
IPW65R080CFD
DISTI # IPW65R080CFDFKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 43.3A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$4.1900
  • 1200:$4.2900
  • 720:$4.4900
  • 480:$4.5900
  • 240:$4.7900
IPW65R080CFDFKSA1
DISTI # 47W3485
Infineon Technologies AGMOSFET, N CHANNEL, 700V, 43.3A, TO247,Transistor Polarity:N Channel,Continuous Drain Current Id:43.3A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.072ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
  • 100:$6.9900
  • 50:$7.4700
  • 25:$7.9300
  • 10:$8.2900
  • 1:$9.0900
IPW65R080CFDFKSA1
DISTI # 726-IPW65R080CFDFKSA
Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
RoHS: Compliant
695
  • 1:$8.0100
  • 10:$7.2400
  • 25:$6.9000
  • 100:$5.9900
  • 250:$5.7200
  • 500:$5.2200
IPW65R080CFD
DISTI # 726-IPW65R080CFD
Infineon Technologies AGMOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2
RoHS: Compliant
240
  • 1:$8.0100
  • 10:$7.2400
  • 25:$6.9000
  • 100:$5.9900
  • 250:$5.7200
  • 500:$5.2200
IPW65R080CFDFKSA1
DISTI # 2212841
Infineon Technologies AGMOSFET, N-CH, 700V, 43.3A, TO24722
  • 100:£4.6600
  • 50:£5.0200
  • 10:£5.3800
  • 5:£6.2400
  • 1:£6.7900
IPW65R080CFDFKSA1
DISTI # 2212841
Infineon Technologies AGMOSFET, N-CH, 700V, 43.3A, TO247
RoHS: Compliant
24
  • 500:$7.8700
  • 250:$8.6200
  • 100:$9.0300
  • 25:$10.4000
  • 10:$10.9100
  • 1:$12.0700
Image Part # Description
STW50N65DM2AG

Mfr.#: STW50N65DM2AG

OMO.#: OMO-STW50N65DM2AG

MOSFET Automotive-grade N-channel 650 V, 0.070 Ohm typ., 38 A MDmesh DM2 Power MOSFET in a TO-247 package
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Mfr.#: FDN5618P

OMO.#: OMO-FDN5618P

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FCH077N65F-F155

Mfr.#: FCH077N65F-F155

OMO.#: OMO-FCH077N65F-F155

MOSFET SuperFET2 650V, 77 mOhm, FRFET
FDN5618P

Mfr.#: FDN5618P

OMO.#: OMO-FDN5618P-ON-SEMICONDUCTOR

MOSFET P-CH 60V 1.25A SSOT3
STW50N65DM2AG

Mfr.#: STW50N65DM2AG

OMO.#: OMO-STW50N65DM2AG-STMICROELECTRONICS

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FCH077N65F-F155

Mfr.#: FCH077N65F-F155

OMO.#: OMO-FCH077N65F-F155-ON-SEMICONDUCTOR

MOSFET N-CH 650V 54A TO247
Availability
Stock:
696
On Order:
2679
Enter Quantity:
Current price of IPW65R080CFDFKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.01
$8.01
10
$7.24
$72.40
25
$6.90
$172.50
100
$5.99
$599.00
250
$5.72
$1 430.00
500
$5.22
$2 610.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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