SIHD6N80E-GE3

Mfr. #:: SIHD6N80E-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 800V Vds 30V Vgs DPAK (TO-252)
Lifecycle:: New from this manufacturer.
Datasheet:: SIHD6N80E-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SIHD6N80E-GE3 Datasheet SIHD6N80E-GE3 Datasheet (P4-P6)SIHD6N80E-GE3 Datasheet (P7)
ECAD Model:
More Information:: SIHD6N80E-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 800 V

Id - Continuous Drain Current:: 5.4 A

Rds On - Drain-Source Resistance:: 820 mOhms

Vgs th - Gate-Source Threshold Voltage:: 4 V

Vgs - Gate-Source Voltage:: 30 V

Qg - Gate Charge:: 44 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 78 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Series:: E

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 2.5 S

Fall Time:: 18 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 27 ns

Typical Turn-On Delay Time:: 13 ns

Tags: SIHD6, SIHD, SIH

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHD6N80E-GE3 Description

***et Japan: Transistor MOSFET N-CH 800V 5.4A 3-Pin TO-252

***ical: Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA

***ment14 APAC: MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W

***ark: MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

SIHD6N80E-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

Part #	Mfg.	Description	Stock	Price
SIHD6N80E-GE3 DISTI # V99:2348_21764828	Vishay Intertechnologies	SIHD6N80E-GE3	2940	3000:$0.9135 1000:$0.9791 500:$1.1955 100:$1.3472 10:$1.7678 1:$2.3215
SIHD6N80E-GE3 DISTI # SIHD6N80E-GE3-ND	Vishay Siliconix	MOSFET N-CHAN 800V TO-252 RoHS: Compliant Min Qty: 1 Container: Bulk	2973In Stock	5000:$0.9378 2500:$0.9738 1000:$1.0460 500:$1.2624 100:$1.5365 10:$1.9120 1:$2.1300
SIHD6N80E-GE3 DISTI # 29435235	Vishay Intertechnologies	SIHD6N80E-GE3	2940	3000:$0.9135 1000:$0.9791 500:$1.1955 100:$1.3472 10:$1.7678 8:$2.3215
SIHD6N80E-GE3 DISTI # SIHD6N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 5.4A ID Thin Lead 3-Pin DPAK - Tape and Reel (Alt: SIHD6N80E-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.8799 18000:$0.9049 12000:$0.9299 6000:$0.9699 3000:$0.9999
SIHD6N80E-GE3 DISTI # 59AC7384	Vishay Intertechnologies	N-CHANNEL 800V	0	2500:$0.9000 1000:$1.0100 500:$1.1600 100:$1.2900 50:$1.4500 25:$1.5800 10:$1.7100 1:$2.0900
SIHD6N80E-GE3 DISTI # 78-SIHD6N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	2706	1:$2.1400 10:$1.7800 100:$1.3800 500:$1.2100 1000:$0.9970
SIHD6N80E-GE3 DISTI # 2932925	Vishay Intertechnologies	MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W RoHS: Compliant	0	1000:$1.5500 500:$1.6400 250:$1.9300 100:$2.3400 10:$2.9900 1:$3.6200
SIHD6N80E-GE3 DISTI # 2932925	Vishay Intertechnologies	MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W	0	500:£0.8870 250:£0.9470 100:£1.0100 10:£1.3200 1:£1.7800

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of SIHD6N80E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.14~~; ~~$2.14~~

10: ~~$1.78~~; ~~$17.80~~

100: ~~$1.38~~; ~~$138.00~~

500: ~~$1.21~~; ~~$605.00~~

1000: ~~$1.00~~; ~~$997.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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SIHD6N80E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes