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IPW65R190C7XKSA1

IPW65R190C7XKSA1
Mfr. #:
IPW65R190C7XKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPW65R190C7XKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPW65R190C7XKSA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
168 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
23 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
72 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Tube
Height:
21.1 mm
Length:
16.13 mm
Series:
CoolMOS C7
Transistor Type:
1 N-Channel
Width:
5.21 mm
Brand:
Infineon Technologies
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
240
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
54 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
IPW65R190C7 SP001080142
Unit Weight:
1.340411 oz
Tags
IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET N-Channel 650V 13A 3-Pin TO-247 Tube
***nell
MOSFET, N-CH, 650V, 24A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 24A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.404ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPW65R190C7XKSA1
DISTI # 33259064		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		240
  • 240:$1.6320
IPW65R190C7XKSA1
DISTI # IPW65R190C7XKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 20.2A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$2.6679
IPW65R190C7XKSA1
DISTI # V36:1790_06378141		Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$1.5180
  • 120000:$1.5210
  • 24000:$1.8410
  • 2400:$2.4300
  • 240:$2.5300
IPW65R190C7XKSA1
DISTI # SP001080142		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-247 Tube (Alt: SP001080142)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 720
  • 1000:€1.3900
  • 500:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 25:€1.6900
  • 10:€1.7900
  • 1:€1.8900
IPW65R190C7XKSA1
DISTI # IPW65R190C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-247 Tube - Bulk (Alt: IPW65R190C7XKSA1)
RoHS: Compliant
Min Qty: 211
Container: Bulk		Americas - 0
  • 633:$1.4900
  • 1055:$1.4900
  • 2110:$1.4900
  • 422:$1.5900
  • 211:$1.6900
IPW65R190C7XKSA1
DISTI # IPW65R190C7XKSA1		Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R190C7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$1.5900
  • 2400:$1.5900
  • 960:$1.6900
  • 240:$1.7900
  • 480:$1.7900
IPW65R190C7XKSA1
DISTI # 54X5237		Infineon Technologies AGMOSFET Transistor, N Channel, 24 A, 650 V, 0.404 ohm, 10 V, 3.5 V RoHS Compliant: Yes0
  • 500:$2.4200
  • 250:$2.6600
  • 100:$2.7900
  • 50:$2.9200
  • 25:$3.0500
  • 10:$3.1700
  • 1:$3.6700
IPW65R190C7
DISTI # 726-IPW65R190C7		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		223
  • 1:$3.4400
  • 10:$2.9300
  • 100:$2.5400
  • 250:$2.4100
  • 500:$2.1600
IPW65R190C7XKSA1
DISTI # 726-IPW65R190C7XKSA1		Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant		287
  • 1:$3.4400
  • 10:$2.9300
  • 100:$2.5400
  • 250:$2.4100
  • 500:$2.1600
IPW65R190C7XKSA1Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant		36240
  • 1000:$1.5700
  • 500:$1.6500
  • 100:$1.7200
  • 25:$1.7900
  • 1:$1.9300
IPW65R190C7XKSA1
DISTI # 8977630P		Infineon Technologies AGMOSFET N-CHANNEL 650V 13A COOLMOS TO247, TU468
  • 150:£1.9000
  • 60:£2.0530
  • 30:£2.2000
  • 6:£2.3970
IPW65R190C7XKSA1
DISTI # IPW65R190C7XKSA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,650V,13A,72W,PG-TO247-336
  • 25:$2.6000
  • 10:$2.9700
  • 3:$3.7300
  • 1:$4.3000
IPW65R190C7XKSA1
DISTI # IPW65R190C7		Infineon Technologies AGN-Ch 650V 13A 72W 0,19R TO247
RoHS: Compliant		235
  • 1:€5.9800
  • 10:€1.9800
  • 50:€1.4800
  • 100:€1.4200
IPW65R190C7XKSA1
DISTI # 2420511		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-247-3
RoHS: Compliant		1
  • 500:$3.2600
  • 250:$3.6300
  • 100:$3.8300
  • 10:$4.4200
  • 1:$5.1800
IPW65R190C7XKSA1
DISTI # 2420511		Infineon Technologies AGMOSFET, N-CH, 650V, 24A, TO-247-3485
  • 500:£1.5700
  • 250:£1.7400
  • 100:£1.8400
  • 10:£2.1300
  • 1:£2.9400
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Availability
Stock:
277
On Order:
2260
Enter Quantity:
Current price of IPW65R190C7XKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.44
$3.44
10
$2.93
$29.30
100
$2.54
$254.00
250
$2.41
$602.50
500
$2.16
$1 080.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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