IPZ60R060C7XKSA1

Mfr. #:: IPZ60R060C7XKSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET HIGH POWER_NEW
Lifecycle:: New from this manufacturer.
Datasheet:: IPZ60R060C7XKSA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPZ60R060C7XKSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Vds - Drain-Source Breakdown Voltage:: 600 V

Tradename:: CoolMOS

Packaging:: Tube

Series:: CoolMOS C7

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 240

Subcategory:: MOSFETs

Part # Aliases:: IPZ60R060C7 SP001385028

Tags: IPZ60R0, IPZ60, IPZ6, IPZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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IPZ60R060C7XKSA1 Description

***el Electronic: Cap Ceramic 0.47uF 10V X5R 10% SMD 0603 85°C Paper T/R

***nell: MOSFET, N-CH, 600V, 35A, 162W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 162W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***icroelectronics: N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOSFET in TO247-4 package

***r Electronics: Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 600V 42A 4-Pin(4+Tab) TO-247 Tube

***icroelectronics SCT: Power MOSFETs, 600V, 42A, TO247-4, Tube

***et: Trans MOSFET N-CH 650V 30A 4-Pin TO-247 Tube

***ineon SCT: Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-4, RoHS

***ineon: Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

***icroelectronics: N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package

***r Electronics: Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247-4

***nell: MOSFET, N-CH, 600V, 52A, 150DEG C, 350W; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 350W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

***ical: Trans MOSFET N-CH 650V 33A 4-Pin(4+Tab) TO-247 Tube

***nell: MOSFET, N-CH, 650V, 33A, 171W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.058ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 171W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO247-4, RoHS

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

***el Electronic: Cap Ceramic 0.56uF 10V X5R 10% SMD 0603 85°C Paper T/R

***nell: MOSFET, N-CH, 600V, 22A, 110W, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 110W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS C7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***emi: N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 76 A, 41 mΩ, TO-247 4L

***et: N-Channel SuperFET II FRFET MOSFET 650V Drain to Source Voltage 76A Continuous Drain Current 595W Power Dissipation Thru-Hole 4-Pin TO-247 Tube

***r Electronics: Power Field-Effect Transistor, 76A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

***el Electronic: Aluminum Electrolytic Capacitors 330μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive CAP ALUM 330UF 20% 50V SMD

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.

IPZ60R060C7XKSA1 More Information

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

Part #	Mfg.	Description	Stock	Price
IPZ60R060C7XKSA1 DISTI # 33655375	Infineon Technologies AG	Trans MOSFET N-CH 600V 35A 4-Pin(4+Tab) TO-247 Tube	240	3:$4.2894
IPZ60R060C7XKSA1 DISTI # IPZ60R060C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 35A TO247-4 RoHS: Compliant Min Qty: 240 Container: Tube	Temporarily Out of Stock	240:$6.4006
IPZ60R060C7XKSA1 DISTI # SP001385028	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) (Alt: SP001385028) RoHS: Compliant Min Qty: 1	Europe - 1200	1000:€3.8900 500:€3.9900 100:€4.0900 50:€4.2900 25:€4.3900 10:€4.8900 1:€5.9900
IPZ60R060C7XKSA1 DISTI # IPZ60R060C7XKSA1	Infineon Technologies AG	MOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPZ60R060C7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$4.2900 1440:$4.3900 960:$4.4900 480:$4.6900 240:$4.8900
IPZ60R060C7XKSA1 DISTI # 84AC6849	Infineon Technologies AG	MOSFET, N-CH, 600V, 35A, 162W, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.052ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	236	500:$5.3500 250:$5.8800 100:$6.1500 50:$6.6200 25:$7.0900 10:$7.4300 1:$8.2200
IPZ60R060C7XKSA1 DISTI # 726-IPZ60R060C7XKSA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	0	1:$8.1400 10:$7.3600 25:$7.0200 100:$6.0900 250:$5.8200 500:$5.3000
IPZ60R060C7XKSA1 DISTI # 2983377	Infineon Technologies AG	MOSFET, N-CH, 600V, 35A, 162W, TO-247 RoHS: Compliant	226	250:$6.8600 100:$7.9500 50:$8.5600 10:$9.1500 5:$10.6100 1:$11.5100
IPZ60R060C7XKSA1 DISTI # XSKDRABV0021289	Infineon Technologies AG	Feed Through Capacitor, 1 Function(s), 50V, 1A RoHS: Compliant	960 in Stock0 on Order	960:$6.0000 240:$6.4300
IPZ60R060C7XKSA1 DISTI # 2983377	Infineon Technologies AG	MOSFET, N-CH, 600V, 35A, 162W, TO-247	208	10:£5.6600 5:£6.5600 1:£7.1400

IPZ60R060C7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes