SISH112DN-T1-GE3

Mfr. #:: SISH112DN-T1-GE3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET 30V Vds 12V Vgs PowerPAK 1212-8
Lifecycle:: New from this manufacturer.
Datasheet:: SISH112DN-T1-GE3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: SISH112DN-T1-GE3 more Information

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PowerPAK-1212-8SH

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 30 V

Id - Continuous Drain Current:: 17.8 A

Rds On - Drain-Source Resistance:: 7.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 600 mV

Vgs - Gate-Source Voltage:: 12 V

Qg - Gate Charge:: 27 nC

Minimum Operating Temperature:: - 50 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 3.8 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: TrenchFET, PowerPAK

Packaging:: Reel

Series:: SIS

Transistor Type:: 1 N-Channel TrenchFET Power MOSFET

Brand:: Vishay / Siliconix

Forward Transconductance - Min:: 97 S

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 65 ns

Typical Turn-On Delay Time:: 10 ns

Tags: SISH11, SISH1, SISH, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISH112DN-T1-GE3 More Information

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

Part #	Mfg.	Description	Stock	Price
SISH112DN-T1-GE3 DISTI # V99:2348_22712067	Vishay Intertechnologies	N-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.5	6000	3000:$0.5823 1000:$0.6228 500:$0.7961 100:$0.9453 10:$1.2084 1:$1.6317
SISH112DN-T1-GE3 DISTI # SISH112DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 30V PPAK 1212-8SH RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6050In Stock	1000:$0.6976 500:$0.8836 100:$1.0696 10:$1.3720 1:$1.5300
SISH112DN-T1-GE3 DISTI # SISH112DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V PPAK 1212-8SH RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6050In Stock	1000:$0.6976 500:$0.8836 100:$1.0696 10:$1.3720 1:$1.5300
SISH112DN-T1-GE3 DISTI # SISH112DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	15000:$0.5779 6000:$0.6005 3000:$0.6321
SISH112DN-T1-GE3 DISTI # 31579471	Vishay Intertechnologies	N-Channel 30 V (D-S) Fast Switching MOSFET PowerPAK 1212-8SH 300M , 7.5 m @ 10V m @ 7.5V 8.2 m @ 4.5	6000	3000:$0.5823 1000:$0.6228 500:$0.7961 100:$0.9453 11:$1.2084
SISH112DN-T1-GE3 DISTI # SISH112DN-T1-GE3	Vishay Intertechnologies	N-CH 30-V (D-S) FAST SWITCHING MOSFE - Tape and Reel (Alt: SISH112DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.5509 30000:$0.5659 18000:$0.5819 12000:$0.6069 6000:$0.6249
SISH112DN-T1-GE3 DISTI # 81AC3493	Vishay Intertechnologies	N-CH 30-V (D-S) FAST SWITCHING MOSFE	0	10000:$0.5470 6000:$0.5590 4000:$0.5810 2000:$0.6450 1000:$0.7100 1:$0.7400
SISH112DN-T1-GE3 DISTI # 99AC9582	Vishay Intertechnologies	MOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W,Transistor Polarity:N Channel,Continuous Drain Current Id:11.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,PowerRoHS Compliant: Yes	50	500:$0.8260 250:$0.8930 100:$0.9610 50:$1.0500 25:$1.1500 10:$1.2400 1:$1.5200
SISH112DN-T1-GE3 DISTI # 78-SISH112DN-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	5944	1:$1.5000 10:$1.2300 100:$0.9500 500:$0.8170 1000:$0.6440 3000:$0.6010 6000:$0.5710 9000:$0.5500
SISH112DN-T1-GE3 DISTI # 3019128	Vishay Intertechnologies	MOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W RoHS: Compliant	50	5000:$0.9140 1000:$0.9200 500:$1.1400 250:$1.2500 100:$1.3600 25:$1.7400 5:$1.9100
SISH112DN-T1-GE3 DISTI # 3019128	Vishay Intertechnologies	MOSFET, N-CH, 30V, 11.3A, 150DEG C, 1.5W	50	500:£0.5930 250:£0.6420 100:£0.6900 10:£0.9380 1:£1.2400

Related products

Image	Part #	Description
	Mfr.#: NJW3281G OMO.#: OMO-NJW3281G	Bipolar Transistors - BJT 200 W BETA AUDIO
	Mfr.#: FDMC6675BZ OMO.#: OMO-FDMC6675BZ	MOSFET -30V 20A P-Channel PowerTrench
	Mfr.#: SP-3541 OMO.#: OMO-SP-3541	Phone Connectors audio plug 3.5mm RT 4 conductor TH
	Mfr.#: JMK107BC6226MA-T OMO.#: OMO-JMK107BC6226MA-T	Multilayer Ceramic Capacitors MLCC - SMD/SMT 22uF 6.3V X6S 20% 0603 Gen Purp
	Mfr.#: RC0402FR-07100KL OMO.#: OMO-RC0402FR-07100KL	Thick Film Resistors - SMD 100K OHM 1%
	Mfr.#: L135-G525003500000 OMO.#: OMO-L135-G525003500000	High Power LEDs - Single Color Green 520nm-540nm
	Mfr.#: L135-G525003500000 OMO.#: OMO-L135-G525003500000-LUMILEDS	3535L GREEN
	Mfr.#: EMK316BB7226ML-T OMO.#: OMO-EMK316BB7226ML-T-TAIYO-YUDEN	CAP CER 22UF 16V X7R 1206
	Mfr.#: FDMC6675BZ OMO.#: OMO-FDMC6675BZ-ON-SEMICONDUCTOR	MOSFET P-CH 30V 9.5A POWER33
	Mfr.#: NJW3281G OMO.#: OMO-NJW3281G-ON-SEMICONDUCTOR	Bipolar Transistors - BJT 200 W BETA AUDIO

Availability

Stock:: Available
On Order:: 1988
Enter Quantity:

Current price of SISH112DN-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.50~~; ~~$1.50~~

10: ~~$1.23~~; ~~$12.30~~

100: ~~$0.95~~; ~~$95.00~~

500: ~~$0.82~~; ~~$408.50~~

1000: ~~$0.64~~; ~~$644.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

Start with

SISH11 4
SISH1 9
SISH 31
SIS 843

Newest Products

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Compare SISH112DN-T1-GE3

SISH110DNT1GE3 vs SISH112DNT1GE3 vs SISH114ADNT1GE3
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SISH112DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes