BFP780H6327XTSA1

Mfr. #:: BFP780H6327XTSA1
Manufacturer:: Infineon Technologies
Description:: RF Amplifier RF BIP TRANSISTORS
Lifecycle:: New from this manufacturer.
Datasheet:: BFP780H6327XTSA1 Datasheet
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More Information:: BFP780H6327XTSA1 more Information

Product Attribute
Attribute Value

Manufacturer: INFINEON

Product Category: Transistors - Bipolar (BJT) - RF

Series: -

Type: High Gain Driver Amplifier

Packaging: Digi-ReelR Alternate Packaging

Mounting-Style: SMD/SMT

Package-Case: SOT-343-4

Technology: SiGe

Mounting-Type: Surface Mount

Number-of-Channels: 1 Channel

Supplier-Device-Package: SOT343-4-2

Power-Max: 600mW

Transistor-Type: NPN

Current-Collector-Ic-Max: 120mA

Voltage-Collector-Emitter-Breakdown-Max: 6.1V

DC-Current-Gain-hFE-Min-Ic-Vce: 85 @ 90mA, 5V

Frequency-Transition: 900MHz

Noise-Figure-dB-Typ-f: 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz

Gain: 27dB

Test-Frequency: 900 MHz

Maximum-Operating-Temperature: + 150 C

Operating-Supply-Voltage: 5 V

Operating-Supply-Current: 90 mA

Operating-Frequency: 900 MHz

NF-Noise-Figure: 1.2 dB

P1dB-Compression-Point: 23 dBm

Part-#-Aliases: BFP780H6327 SP000924978

OIP3-Third-Order-Intercept: 34.5 dBm

Tags: BFP7, BFP

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BFP780H6327XTSA1 Description

***et Japan: Transistor GP BJT NPN 6.1V 120mA 4-Pin SOT-343 T/R

***ow.cn: Trans RF BJT NPN 6.1V 0.12A 600mW 4-Pin(3+Tab) SOT-343 T/R

***ark: Transistor, Rf, Aec-Q101, Npn, Sot-343; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:6.6V; Transition Frequency Ft:20Ghz; Power Dissipation Pd:600Mw; Dc Collector Current:120Ma; Dc Current Gain Hfe:85Hfe; Rf Transistorrohs Compliant: Yes

***ineon: The BFP780 is a single stage driver amplifier with high linearity and high power gain. Its output 1dB compression point is 23 dBm. The chip is housed in a halogen-free industry standard package SOT343. The proper die attach with good thermal contact is 100% tested and verified. Same as BFQ790, the device is based on Infineon's reliable and cost effective NPN SiGe technology running in high volume. The collector design allows safe operation with 5 V supply voltage. | Summary of Features: High 3rd order intercept point OIP3 of 34 dBm @ 5 V, 90 mA; High compression point OP1dB of 23 dBm @ 5 V, 90 mA corresponding to 45 % collector efficiency; Low minimum noise figure of 1.2 dB @ 900 MHz, 5 V, 30 mA; Single stage, intended for external matching; High maximum RF input power PRFinmax of 20 dBm; Safe operation with single 5 V supply; 100% test of proper die attach for reproducible thermal contact; 100% DC and RF tested; Easy to use large signal compact (VBIC) model in development; Cost effective NPN SiGe technology running in very high volume; Easy to use Pb-free (RoHS compliant) and halogen-free industry standard package SOT343, low RTHJS of 95 K/W | Target Applications: High linearity driver or pre-driver in the transmit chain; 2nd or 3rd stage LNA in the receive chain; IF or LO buffer amplifier; Commercial / industrial wireless infrastructure / basestations; Repeaters; Automated test equipment; Cellular, PCS, DCS, UMTS, LTE, CDMA, WCDMA, GSM, GPRS; WLAN, WiMAX, WLL and MMDS; ISM, AMR; UHF television, CATV, DBS

BFP780H6327XTSA1 More Information

BFP780 200mW High Gain Driver Amplifier: Infineon BFP780 is designed a single-stage 200mW high-power gain driver amplifier. Because the device is intended for external matching, BFP780 can be used in any application where high linearity is essential. Operating from a single 5V supply, the BFP780 provides a high compression OP1dB of 23dBm output point and OIP3 of 34dBM 3rd order intercept point at 90mA. The amplifier delivers a low 1.2dB @ 900MHz minimum noise figure. The BFP780 proper die attach with thermal contact is 100% tested and verified to ensure a minimum variation in thermal properties. Housed in an industry-standard SOT343 package, BFP780 is 100% DC and RF tested.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
BFP780H6327XTSA1 DISTI # V72:2272_13988657	Infineon Technologies AG	High Gain RF Driver Amplifier	2661	1000:$0.8342 500:$0.9979 250:$1.0919 100:$1.1848 25:$1.4357 10:$1.4390 1:$1.5747
BFP780H6327XTSA1 DISTI # BFP780H6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 6.1V 900MHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1571In Stock	1000:$0.9701 500:$1.1486 100:$1.3746 10:$1.6840 1:$1.8600
BFP780H6327XTSA1 DISTI # BFP780H6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 6.1V 900MHZ SOT343 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1571In Stock	1000:$0.9701 500:$1.1486 100:$1.3746 10:$1.6840 1:$1.8600
BFP780H6327XTSA1 DISTI # BFP780H6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 6.1V 900MHZ SOT343 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	6000:$0.8745 3000:$0.8841
BFP780H6327XTSA1 DISTI # 26196596	Infineon Technologies AG	High Gain RF Driver Amplifier	2661	1000:$0.8342 500:$0.9979 250:$1.0919 100:$1.1848 25:$1.4357 10:$1.4390
BFP780H6327XTSA1 DISTI # SP000924978	Infineon Technologies AG	RF BIP TRANSISTORS (Alt: SP000924978) RoHS: Compliant Min Qty: 3000	Europe - 3000	3000:€0.7459 6000:€0.7439 12000:€0.7419 18000:€0.7399 30000:€0.7379
BFP780H6327XTSA1 DISTI # BFP780H6327XTSA1	Infineon Technologies AG	RF BIP TRANSISTORS - Tape and Reel (Alt: BFP780H6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7919 6000:$0.7629 12000:$0.7359 18000:$0.7109 30000:$0.6979
BFP780H6327XTSA1 DISTI # 34AC1358	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, SOT-343,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:6.6V,Transition Frequency ft:20GHz,Power Dissipation Pd:600mW,DC Collector Current:120mA,DC Current Gain hFE:85hFE,RF TransistorRoHS Compliant: Yes	1134	1:$1.7500 10:$1.5800 25:$1.4800 50:$1.3700 100:$1.2700 250:$1.1600 500:$1.0500 1000:$0.8630
BFP780H6327XTSA1 DISTI # 726-BFP780H6327XTSA1	Infineon Technologies AG	RF Amplifier RF BIP TRANSISTORS RoHS: Compliant	2881	1:$1.7500 10:$1.5800 100:$1.2700 250:$1.1600 500:$1.0500 1000:$0.8630
BFP780H6327XTSA1	Infineon Technologies AG	RoHS: Not Compliant	32000	1000:$0.7200 500:$0.7600 100:$0.7900 25:$0.8300 1:$0.8900
BFP780H6327XTSA1 DISTI # 2781217	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, SOT-343 RoHS: Compliant	949	5:£1.3500 25:£1.2400 100:£1.0000 250:£0.9150 500:£0.8220
BFP780H6327XTSA1 DISTI # 2781217	Infineon Technologies AG	TRANSISTOR, RF, AEC-Q101, NPN, SOT-343 RoHS: Compliant	834	5:$2.9500 25:$2.5700 100:$2.1000 250:$1.7700 500:$1.5300 1000:$1.4500 5000:$1.3700
BFP780H6327XTSA1 DISTI # C1S322000560820	Infineon Technologies AG	High Gain RF Driver Amplifier RoHS: Compliant	2661	250:$1.0314 100:$1.1103 25:$1.3155 10:$1.3210

BFP780H6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes