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IPD65R650CEAUMA1

IPD65R650CEAUMA1
Mfr. #:
IPD65R650CEAUMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET CONSUMER
Lifecycle:
New from this manufacturer.
Datasheet:
IPD65R650CEAUMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PG-TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
10.1 A
Rds On - Drain-Source Resistance:
650 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.5 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
23 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
86 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS CE
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
11 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
64 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
IPD65R650CE SP001396908
Unit Weight:
0.011993 oz
Tags
IPD65R65, IPD65R6, IPD65R, IPD65, IPD6, IPD
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
Single N-Channel 650V 650 mOhm 23 nC CoolMOS Power Mosfet - TO-252-3, PG-TO252-3, RoHS
***ark
Mosfet, N-Ch, 650V, 10.1A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:10.1A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.54Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ineon
CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV
Part # Mfg. Description Stock Price
IPD65R650CEAUMA1
DISTI # V72:2272_13979491		Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R2500
  • 1:$0.3626
IPD65R650CEAUMA1
DISTI # V36:1790_13979491		Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R0
  • 2500000:$0.3011
  • 1250000:$0.3013
  • 250000:$0.3264
  • 25000:$0.3708
  • 2500:$0.3782
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 7A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		2500In Stock
  • 25000:$0.3304
  • 12500:$0.3391
  • 5000:$0.3521
  • 2500:$0.3782
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 7A TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2500In Stock
  • 1000:$0.4030
  • 500:$0.5104
  • 100:$0.6179
  • 10:$0.7920
  • 1:$0.8900
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 650V 7A TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2500In Stock
  • 1000:$0.4030
  • 500:$0.5104
  • 100:$0.6179
  • 10:$0.7920
  • 1:$0.8900
IPD65R650CEAUMA1
DISTI # 33962603		Infineon Technologies AGTrans MOSFET N-CH 650V 10.1A 3-Pin(2+Tab) DPAK T/R2500
  • 21:$0.3403
IPD65R650CEAUMA1
DISTI # SP001396908		Infineon Technologies AG650VCoolMOSCEPowerTransistor (Alt: SP001396908)
RoHS: Compliant
Min Qty: 2500		Europe - 7500
  • 25000:€0.2949
  • 15000:€0.3179
  • 10000:€0.3439
  • 5000:€0.3759
  • 2500:€0.4589
IPD65R650CEAUMA1
DISTI # IPD65R650CEAUMA1		Infineon Technologies AG650VCoolMOSCEPowerTransistor - Tape and Reel (Alt: IPD65R650CEAUMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.3149
  • 15000:$0.3209
  • 10000:$0.3319
  • 5000:$0.3449
  • 2500:$0.3569
IPD65R650CEAUMA1
DISTI # 34AC1687		Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:10.1A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 1000:$0.4020
  • 500:$0.4350
  • 250:$0.4690
  • 100:$0.5020
  • 50:$0.5940
  • 25:$0.6860
  • 10:$0.7780
  • 1:$0.9290
IPD65R650CEAUMA1
DISTI # 726-IPD65R650CEAUMA1		Infineon Technologies AGMOSFET CONSUMER
RoHS: Compliant		2450
  • 1:$0.9200
  • 10:$0.7700
  • 100:$0.4970
  • 1000:$0.3980
IPD65R650CEAUMA1
DISTI # 2781176		Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-2522496
  • 500:£0.3320
  • 250:£0.3580
  • 100:£0.3830
  • 10:£0.6460
  • 1:£0.8100
IPD65R650CEAUMA1
DISTI # 2781176		Infineon Technologies AGMOSFET, N-CH, 650V, 10.1A, TO-252
RoHS: Compliant		0
  • 100:$0.7650
  • 25:$0.9360
  • 5:$1.0800
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of IPD65R650CEAUMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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