PartNumber | IPD65R190C7ATMA1 | IPD65R190C7 | IPD650P06NMATMA1 |
Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET TRENCH 40<-<100V |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | PG-TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | - 60 V |
Id Continuous Drain Current | 13 A | 13 A | - 22 A |
Rds On Drain Source Resistance | 168 mOhms | 190 mOhms | 65 mOhms |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - 4 V |
Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
Qg Gate Charge | 23 nC | 23 nC | - 39 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Pd Power Dissipation | 72 W | 72 W | 83 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | CoolMOS | CoolMOS | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Series | CoolMOS C7 | CoolMOS C7 | IPD06P003 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 P-Channel |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fall Time | 9 ns | 9 ns | 12 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 11 ns | 11 ns | 14 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 54 ns | 54 ns | 33 ns |
Typical Turn On Delay Time | 11 ns | 11 ns | 12 ns |
Part # Aliases | IPD65R190C7 SP000928648 | IPD65R190C7ATMA1 SP000928648 | IPD650P06NM SP004987256 |
Unit Weight | 0.139332 oz | 0.028219 oz | - |
Forward Transconductance Min | - | - | 21 S |