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IPD65R420CFD

IPD65R420CFD
Mfr. #:
IPD65R420CFD
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
Lifecycle:
New from this manufacturer.
Datasheet:
IPD65R420CFD Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD65R420CFD more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
8.7 A
Rds On - Drain-Source Resistance:
420 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
32 nC
Pd - Power Dissipation:
83.3 W
Configuration:
Single
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS CFD2
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
8 ns
Product Type:
MOSFET
Rise Time:
7 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Part # Aliases:
IPD65R420CFDBTMA1 IPD65R42CFDXT SP000891704
Unit Weight:
0.139332 oz
Tags
IPD65R42, IPD65R4, IPD65R, IPD65, IPD6, IPD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPD65R420CFDBTMA1
DISTI # IPD65R420CFDBTMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPD65R420CFDBTMA1
    DISTI # IPD65R420CFDBTMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPD65R420CFDBTMA1
      DISTI # IPD65R420CFDBTMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.8756
      IPD65R420CFDBTMA1
      DISTI # SP000891704      		Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-252 (Alt: SP000891704)
      RoHS: Compliant
      Min Qty: 2500      		Europe - 2500
      • 2500:€1.3259
      • 5000:€1.1129
      • 10000:€0.9289
      • 15000:€0.8099
      • 25000:€0.7579
      IPD65R420CFDBTMA1Infineon Technologies AGPower Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant      		46976
      • 1000:$0.7600
      • 500:$0.8000
      • 100:$0.8400
      • 25:$0.8700
      • 1:$0.9400
      IPD65R420CFD
      DISTI # 726-IPD65R420CFD      		Infineon Technologies AGMOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
      RoHS: Compliant      		0
      • 1:$1.7400
      • 10:$1.4800
      • 100:$1.1800
      • 500:$1.0400
      • 1000:$0.8550
      IPD65R420CFDBTMA1
      DISTI # N/A      		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
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        Availability
        Stock:
        Available
        On Order:
        5500
        Enter Quantity:
        Current price of IPD65R420CFD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.73
        $1.73
        10
        $1.47
        $14.70
        100
        $1.17
        $117.00
        500
        $1.03
        $515.00
        1000
        $0.85
        $854.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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