IPD65R190C7ATMA1

IPD65R190C7ATMA1
Mfr. #:
IPD65R190C7ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET HIGH POWER_NEW
Lifecycle:
New from this manufacturer.
Datasheet:
IPD65R190C7ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD65R190C7ATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
168 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
23 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
72 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS C7
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
9 ns
Product Type:
MOSFET
Rise Time:
11 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
54 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
IPD65R190C7 SP000928648
Unit Weight:
0.139332 oz
Tags
IPD65R1, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V
***ineon SCT
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range, PG-TO252-3, RoHS
***ineon
Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPD65R190C7ATMA1
DISTI # V72:2272_06377199
Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
    IPD65R190C7ATMA1
    DISTI # V36:1790_06377199
    Infineon Technologies AGTrans MOSFET N-CH 650V 13A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    0
    • 2500000:$1.3070
    • 1250000:$1.3090
    • 250000:$1.3970
    • 25000:$1.5270
    • 2500:$1.5480
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    2475In Stock
    • 1000:$1.4664
    • 500:$1.7698
    • 100:$2.1541
    • 10:$2.6800
    • 1:$2.9800
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    2475In Stock
    • 1000:$1.4664
    • 500:$1.7698
    • 100:$2.1541
    • 10:$2.6800
    • 1:$2.9800
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 650V 13A TO-252
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 5000:$1.2764
    • 2500:$1.3255
    IPD65R190C7ATMA1
    DISTI # IPD65R190C7ATMA1
    Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin DPAK T/R - Tape and Reel (Alt: IPD65R190C7ATMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$1.0900
    • 5000:$1.1900
    • 10000:$1.1900
    • 15000:$1.1900
    • 2500:$1.2900
    IPD65R190C7ATMA1
    DISTI # SP000928648
    Infineon Technologies AGTrans MOSFET N-CH 700V 13A 3-Pin DPAK T/R (Alt: SP000928648)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 25000:€1.0379
    • 15000:€1.1119
    • 10000:€1.1979
    • 5000:€1.2969
    • 2500:€1.5569
    IPD65R190C7ATMA1
    DISTI # 54X5226
    Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.168ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V RoHS Compliant: Yes5000
    • 1000:$1.3600
    • 500:$1.6500
    • 100:$1.8900
    • 10:$2.3500
    • 1:$2.7800
    IPD65R190C7ATMA1
    DISTI # 726-IPD65R190C7ATMA1
    Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant
    0
    • 1:$2.7500
    • 10:$2.3300
    • 100:$1.8700
    • 500:$1.6300
    • 1000:$1.3500
    IPD65R190C7
    DISTI # 726-IPD65R190C7
    Infineon Technologies AGMOSFET HIGH POWER_NEW
    RoHS: Compliant
    0
    • 1:$2.7500
    • 10:$2.3300
    • 100:$1.8700
    • 500:$1.6300
    • 1000:$1.3500
    IPD65R190C7ATMA1
    DISTI # 2420492
    Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252-3
    RoHS: Compliant
    5000
    • 2500:$1.9900
    • 1000:$2.0300
    • 500:$2.4600
    • 100:$2.8200
    • 10:$3.5100
    • 1:$4.1400
    IPD65R190C7ATMA1
    DISTI # 2420492
    Infineon Technologies AGMOSFET, N-CH, 650V, 13A, TO-252-34900
    • 100:£1.7900
    • 10:£2.2300
    • 1:£2.9900
    Image Part # Description
    IS62WVS2568FBLL-20NLI

    Mfr.#: IS62WVS2568FBLL-20NLI

    OMO.#: OMO-IS62WVS2568FBLL-20NLI

    SRAM 2Mb 256Kx8 20MHz 2.2-3.6V Serial SRAM
    DTC143EMFHAT2L

    Mfr.#: DTC143EMFHAT2L

    OMO.#: OMO-DTC143EMFHAT2L

    Bipolar Transistors - Pre-Biased NPN SOT-723 50V VCC 0.1A IC
    IGT60R070D1ATMA1

    Mfr.#: IGT60R070D1ATMA1

    OMO.#: OMO-IGT60R070D1ATMA1

    MOSFET 600V CoolGaN Power Transistor
    CSTNE16M0V530000R0

    Mfr.#: CSTNE16M0V530000R0

    OMO.#: OMO-CSTNE16M0V530000R0

    Resonators 16.0000MHz 15pF SMD CHP Resntr
    C0805C106J8RACAUTO

    Mfr.#: C0805C106J8RACAUTO

    OMO.#: OMO-C0805C106J8RACAUTO

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 10V 10uF X7R 0805 5% AEC-Q200
    ERJ-P06F1500V

    Mfr.#: ERJ-P06F1500V

    OMO.#: OMO-ERJ-P06F1500V

    Thick Film Resistors - SMD 0805 150ohms 0.5W 1% AEC-Q200
    PG164100

    Mfr.#: PG164100

    OMO.#: OMO-PG164100

    Hardware Debuggers MPLAB SNAP DEV BOARD
    ECASD41C476M040KA0

    Mfr.#: ECASD41C476M040KA0

    OMO.#: OMO-ECASD41C476M040KA0-428

    Cap Aluminum Polymer 47uF 16VDC 20% (7.3 X 4.3 X 1.9mm) SMD 0.04 Ohm 1000mA 105C T/R
    DTC143EMFHAT2L

    Mfr.#: DTC143EMFHAT2L

    OMO.#: OMO-DTC143EMFHAT2L-ROHM-SEMI

    NPN DIGITAL TRANSISTOR (CORRESPO
    IGT60R070D1ATMA1

    Mfr.#: IGT60R070D1ATMA1

    OMO.#: OMO-IGT60R070D1ATMA1-INFINEON-TECHNOLOGIES

    IC GAN FET 600V 60A 8HSOF
    Availability
    Stock:
    Available
    On Order:
    1990
    Enter Quantity:
    Current price of IPD65R190C7ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.75
    $2.75
    10
    $2.33
    $23.30
    100
    $1.87
    $187.00
    500
    $1.63
    $815.00
    1000
    $1.35
    $1 350.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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