IPD65R1K0CEAUMA1

Mfr. #:: IPD65R1K0CEAUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET CONSUMER
Lifecycle:: New from this manufacturer.
Datasheet:: IPD65R1K0CEAUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: IPD65R1K0CEAUMA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Vds - Drain-Source Breakdown Voltage:: 650 V

Tradename:: CoolMOS

Packaging:: Reel

Height:: 2.3 mm

Length:: 6.5 mm

Series:: CoolMOS CE

Width:: 6.22 mm

Brand:: Infineon Technologies

Product Type:: MOSFET

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Part # Aliases:: IPD65R1K0CE SP001421368

Unit Weight:: 0.011993 oz

Tags: IPD65R1K, IPD65R1, IPD65R, IPD65, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD65R1K0CEAUMA1 Description

***ical: Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R

***ark: Mosfet, N-Ch, 650V, 7.2A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.2A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets. | Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***et: Transistor MOSFET N-CH 750V 7.4A 3-Pin TO-252 T/R

***ark: Mosfet, N-Ch, 700V, 7.4A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:7.4A; Drain Source Voltage Vds:700V; On Resistance Rds(On):0.86Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS CE is a technology platform of Infineons market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. With the extended family, Infineon offers 600V, 650V and 700V devices targeting low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications. | Summary of Features: Thermal behavior; 90C on device, open case; 50C/70C close case temperature; EMI within EN55022B standard; Ease of use and fast design-in | Benefits: Low conduction losses from large margin between R DS(on) typical to nominal; Low switching losses from optimized output capacitance (E oss); Optimized EMI to balance switching speed and EMI behavior; Good controllability given the integrated R g | Target Applications: Low power chargers; Adapters; PC silverbox; LCD TV; LED retrofit; LED drivers

***icroelectronics: N-channel 650 V, 0.71 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in DPAK package

***ical: Trans MOSFET N-CH 650V 5.5A 3-Pin(2+Tab) DPAK T/R

***el Electronic: IC REG LIN 1.5V 3A DDPAK/TO263-5

*** Electronics: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; PG-TO252-3

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

*** Electronic Components: MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS

***ical: Trans MOSFET N-CH 650V 3.9A Automotive 3-Pin(2+Tab) DPAK T/R

***ineon: 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility

***emi: N-Channel Power MOSFET, SUPERFET® II, 800 V, 2 A, 3.4 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 2A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

IPD65R1K0CEAUMA1 More Information

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ CE Power MOSFETs: Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

CoolMOS CE Power MOSFETs - 600-650V: Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.

Market price

Part #	Mfg.	Description	Stock	Price
IPD65R1K0CEAUMA1 DISTI # 32383709	Infineon Technologies AG	Trans MOSFET N-CH 650V 7.2A 3-Pin(2+Tab) DPAK T/R	2500	2500:$0.2442
IPD65R1K0CEAUMA1 DISTI # IPD65R1K0CEAUMA1-ND	Infineon Technologies AG	MOSFET N-CH 650V TO-252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.2969
IPD65R1K0CEAUMA1 DISTI # IPD65R1K0CEAUMA1	Infineon Technologies AG	Trans MOSFET N-CH 700V 7.2A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R1K0CEAUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2469 15000:$0.2519 10000:$0.2609 5000:$0.2699 2500:$0.2799
IPD65R1K0CEAUMA1 DISTI # SP001421368	Infineon Technologies AG	Trans MOSFET N-CH 700V 7.2A 3-Pin TO-252 T/R (Alt: SP001421368) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.2319 15000:€0.2489 10000:€0.2699 5000:€0.2949 2500:€0.3599
IPD65R1K0CEAUMA1 DISTI # 34AC1685	Infineon Technologies AG	MOSFET, N-CH, 650V, 7.2A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:7.2A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.86ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	277	1000:$0.3150 500:$0.3410 250:$0.3680 100:$0.3940 50:$0.4660 25:$0.5390 10:$0.6110 1:$0.7270
IPD65R1K0CEAUMA1 DISTI # 726-IPD65R1K0CEAUMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	0	1:$0.7200 10:$0.6050 100:$0.3900 1000:$0.3120
IPD65R1K0CEAUMA1 DISTI # 2781174	Infineon Technologies AG	MOSFET, N-CH, 650V, 7.2A, TO-252 RoHS: Compliant	277	100:$0.6010 25:$0.7370 5:$0.8460
IPD65R1K0CEAUMA1 DISTI # 2781174	Infineon Technologies AG	MOSFET, N-CH, 650V, 7.2A, TO-252	247	100:£0.3730 10:£0.6360 1:£0.7880

Image	Part #	Description
	Mfr.#: IPD65R1K4CFD OMO.#: OMO-IPD65R1K4CFD	MOSFET N-Ch 700V 8.2A DPAK-2
	Mfr.#: IPD65R1K4CFDBTMA1 OMO.#: OMO-IPD65R1K4CFDBTMA1	MOSFET N-Ch 700V 8.2A DPAK-2
	Mfr.#: IPD65R1K0CEAUMA1 OMO.#: OMO-IPD65R1K0CEAUMA1	MOSFET CONSUMER
	Mfr.#: IPD65R1K4CFDATMA2 OMO.#: OMO-IPD65R1K4CFDATMA2	MOSFET
	Mfr.#: IPD65R1K4CFDATMA1 OMO.#: OMO-IPD65R1K4CFDATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 2.8A TO-252
	Mfr.#: IPD65R1K5CEAUMA1 OMO.#: OMO-IPD65R1K5CEAUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 700V 5.2A TO252-3
	Mfr.#: IPD65R1K0CEAUMA1 OMO.#: OMO-IPD65R1K0CEAUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V TO-252
	Mfr.#: IPD65R1K4CFD OMO.#: OMO-IPD65R1K4CFD-1190	MOSFET N-Ch 700V 8.2A DPAK-2
	Mfr.#: IPD65R1K4C6ATMA1 OMO.#: OMO-IPD65R1K4C6ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 700V 3.2A DPAK-2
	Mfr.#: IPD65R1K4CFDBTMA1 OMO.#: OMO-IPD65R1K4CFDBTMA1-INFINEON-TECHNOLOGIES	RF Bipolar Transistors MOSFET N-Ch 700V 8.2A DPAK-2

IPD65R1K0CEAUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes