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IPD65R1K4CFDBTMA1

IPD65R1K4CFDBTMA1
Mfr. #:
IPD65R1K4CFDBTMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 700V 8.2A DPAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
IPD65R1K4CFDBTMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD65R1K4CFDBTMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
2.8 A
Rds On - Drain-Source Resistance:
1.26 Ohms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
10 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
28.4 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
IPD65R1
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
18.2 ns
Product Type:
MOSFET
Rise Time:
6 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
33 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
IPD65R1K4CFDBTMA1 SP000953126
Unit Weight:
0.139332 oz
Tags
IPD65R1K4CF, IPD65R1K4, IPD65R1K, IPD65R1, IPD65R, IPD65, IPD6, IPD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 650(Min)V 2.8A 3-Pin TO-252 T/R
***ronik
N-CH 650V 2,8A 1400mOhm TO252-3
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPD65R1K4CFDBTMA1
DISTI # IPD65R1K4CFDBTMA1CT-ND		Infineon Technologies AGMOSFET N-CH 650V 2.8A TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPD65R1K4CFDBTMA1
    DISTI # IPD65R1K4CFDBTMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 650V 2.8A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPD65R1K4CFDBTMA1
      DISTI # IPD65R1K4CFDBTMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 650V 2.8A TO-252
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 2500:$0.4546
      IPD65R1K4CFDBTMA1
      DISTI # SP000953126      		Infineon Technologies AGTrans MOSFET N-CH 700V 2.8A 3-Pin TO-252 T/R (Alt: SP000953126)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 2500:€0.6509
      • 5000:€0.5599
      • 10000:€0.4769
      • 15000:€0.4089
      • 25000:€0.3879
      IPD65R1K4CFDBTMA1Infineon Technologies AGPower Bipolar Transistor
      RoHS: Compliant      		2090
      • 1000:$0.4100
      • 500:$0.4300
      • 100:$0.4500
      • 25:$0.4700
      • 1:$0.5000
      IPD65R1K4CFD
      DISTI # 726-IPD65R1K4CFD      		Infineon Technologies AGMOSFET N-Ch 700V 8.2A DPAK-2
      RoHS: Compliant      		39
      • 1:$0.9700
      • 10:$0.8270
      • 100:$0.6350
      • 500:$0.5610
      • 1000:$0.4430
      IPD65R1K4CFDBTMA1
      DISTI # 726-IPD65R1K4CFDBTMA      		Infineon Technologies AGMOSFET N-Ch 700V 8.2A DPAK-2
      RoHS: Compliant      		232
      • 1:$0.9700
      • 10:$0.8270
      • 100:$0.6350
      • 500:$0.5610
      • 1000:$0.4430
      • 2500:$0.3930
      • 10000:$0.3780
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      Availability
      Stock:
      182
      On Order:
      2165
      Enter Quantity:
      Current price of IPD65R1K4CFDBTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.96
      $0.96
      10
      $0.83
      $8.26
      100
      $0.63
      $63.40
      500
      $0.56
      $280.00
      1000
      $0.44
      $442.00
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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