IPD650P06NMATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

- 60 V

Id - Continuous Drain Current:

- 22 A

Rds On - Drain-Source Resistance:

65 mOhms

Vgs th - Gate-Source Threshold Voltage:

- 4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

- 39 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

83 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

IPD06P003

Transistor Type:

1 P-Channel

Brand:

Infineon Technologies

Forward Transconductance - Min:

21 S

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

14 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

33 ns

Typical Turn-On Delay Time:

12 ns

Part # Aliases:

IPD650P06NM SP004987256

Tags

IPD65, IPD6, IPD