 | |  | |
| PartNumber | IPD65R600C6 | IPD65R600C6BTMA1 | IPD65R600C6ATMA1 |
| Description | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | LOW POWER_LEGACY |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - |
| Id Continuous Drain Current | 7.3 A | 7.3 A | - |
| Rds On Drain Source Resistance | 540 mOhms | 540 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 23 nC | 23 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 63 W | 63 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS C6 | XPD65R600 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 13 ns | 13 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9 ns | 9 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 80 ns | 80 ns | - |
| Typical Turn On Delay Time | 12 ns | 12 ns | - |
| Part # Aliases | IPD65R600C6BTMA1 IPD65R6C6XT SP000745020 | IPD65R600C6 IPD65R6C6XT SP000745020 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Part Aliases | - | - | 0.3504 IPD65R600C6 |
| Package Case | - | - | TO-252-3 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R660CFDA | MOSFET N-Ch 650V 6A DPAK-2 | |
| IPD65R660CFDATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD65R660CFD | MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2 | ||
| IPD65R600C6 | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | ||
| IPD65R600E6ATMA1 | MOSFET N-Ch 700V 7.3A DPAK-2 | ||
| IPD65R600C6BTMA1 | MOSFET N-Ch 700V 7.3A DPAK-2 CoolMOS C6 | ||
| IPD65R660CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPD65R660CFDAATMA1 | MOSFET N-CH TO252-3 | ||
| IPD65R660CFDBTMA1 | MOSFET N-CH 650V 6A TO252 | ||
| IPD65R660CFDATMA1 | MOSFET N-CH 650V 6A TO252 | ||
| IPD65R600C6ATMA1 | LOW POWER_LEGACY | ||
| IPD65R600E6BTMA1 | MOSFET N-CH 650V 7.3A TO252-3 | ||
| IPD65R650CEAUMA1 | MOSFET N-CH 650V 7A TO-252 | ||
| IPD65R600C6BTMA1 | MOSFET N-CH 650V 7.3A TO252 | ||
| IPD65R600E6ATMA1 | MOSFET N-Ch 700V 7.3A DPAK-2 | ||
| IPD65R650CEATMA1 | RF Bipolar Transistors MOSFET CONSUMER | ||
Infineon Technologies |
IPD65R660CFDBTMA1 | MOSFET LOW POWER_LEGACY | |
| IPD65R650CEAUMA1 | MOSFET CONSUMER | ||
| IPD65R650CE | New and Original | ||
| IPD65R660CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPD65R600C6 | Trans MOSFET N-CH 700V 7.3A 3-Pin TO-252 T/R (Alt: SP000745020) | ||
| IPD65R600E | MOSFET, N CH, 700V, 7.3A, TO-252-3 | ||
| IPD65R600E6 | Trans MOSFET N-CH 650V 7.3A 3-Pin TO-252 T/R (Alt: SP000800216) | ||
| IPD65R660CFDA | MOSFET N-Ch 650V 6A DPAK-2 | ||
| IPD65R660CFDXT | New and Original | ||
| IPD65R660CFD | Darlington Transistors MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2 |