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IPD65R660CFDBTMA1

IPD65R660CFDBTMA1
Mfr. #:
IPD65R660CFDBTMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 6A TO252
Lifecycle:
New from this manufacturer.
Datasheet:
IPD65R660CFDBTMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
IPD65R66, IPD65R6, IPD65R, IPD65, IPD6, IPD
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 660 mOhm 22 nC CoolMOS™ Power Mosfet - TO-252-3
***p One Stop Global
Trans MOSFET N-CH 700V 6A 3-Pin(2+Tab) TO-252 T/R
***ical
Trans MOSFET N-CH 650V 6A 3-Pin(2+Tab) DPAK T/R
***et
Trans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 650V 6A TO252
***ark
Mosfet, N-Ch, 650V, 6A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.594Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 6A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.594ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:62.5W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFD2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 650V, 6A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.594ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:62.5W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFD2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
Part # Mfg. Description Stock Price
IPD65R660CFDBTMA1
DISTI # IPD65R660CFDBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 650V 6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.6985
IPD65R660CFDBTMA1
DISTI # 13AC9050		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.594ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes2138
  • 1:$1.5900
  • 10:$1.3600
  • 25:$1.2300
  • 50:$1.1200
  • 100:$0.9360
  • 250:$0.8280
  • 500:$0.7200
  • 1000:$0.6900
IPD65R660CFDBTMA1Infineon Technologies AGPower Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
RoHS: Compliant		67500
  • 1000:$0.5500
  • 500:$0.5800
  • 100:$0.6100
  • 25:$0.6300
  • 1:$0.6800
IPD65R660CFD
DISTI # 726-IPD65R660CFD		Infineon Technologies AGMOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
RoHS: Compliant		615
  • 1:$1.4900
  • 10:$1.2700
  • 100:$0.9760
  • 500:$0.8620
IPD65R660CFDBTMA1
DISTI # N/A		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
    IPD65R660CFDBTMA1
    DISTI # 2726057    		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252-3
    RoHS: Compliant    		2152
    • 5:£0.6890
    • 25:£0.6750
    • 100:£0.6610
    IPD65R660CFDBTMA1
    DISTI # 2726057    		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252-3
    RoHS: Compliant    		2138
    • 1:$2.1800
    • 10:$1.9000
    • 100:$1.5500
    Image Part # Description
    IPD65R660CFDA

    Mfr.#: IPD65R660CFDA

    OMO.#: OMO-IPD65R660CFDA

    		 MOSFET N-Ch 650V 6A DPAK-2
    IPD65R660CFD

    Mfr.#: IPD65R660CFD

    OMO.#: OMO-IPD65R660CFD

    		 MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
    IPD65R660CFDATMA2

    Mfr.#: IPD65R660CFDATMA2

    OMO.#: OMO-IPD65R660CFDATMA2

    		 MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
    IPD65R660CFDBTMA1

    Mfr.#: IPD65R660CFDBTMA1

    OMO.#: OMO-IPD65R660CFDBTMA1

    		 MOSFET LOW POWER_LEGACY
    IPD65R660CFDAATMA1

    Mfr.#: IPD65R660CFDAATMA1

    OMO.#: OMO-IPD65R660CFDAATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH TO252-3
    IPD65R660CFDBTMA1

    Mfr.#: IPD65R660CFDBTMA1

    OMO.#: OMO-IPD65R660CFDBTMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 6A TO252
    IPD65R660CFDATMA1

    Mfr.#: IPD65R660CFDATMA1

    OMO.#: OMO-IPD65R660CFDATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 6A TO252
    IPD65R660CFDATMA2

    Mfr.#: IPD65R660CFDATMA2

    OMO.#: OMO-IPD65R660CFDATMA2-1190

    		 MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve
    IPD65R660CFDA

    Mfr.#: IPD65R660CFDA

    OMO.#: OMO-IPD65R660CFDA-1190

    		 MOSFET N-Ch 650V 6A DPAK-2
    IPD65R660CFD

    Mfr.#: IPD65R660CFD

    OMO.#: OMO-IPD65R660CFD-124

    		 Darlington Transistors MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
    Availability
    Stock:
    Available
    On Order:
    3000
    Enter Quantity:
    Current price of IPD65R660CFDBTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.82
    $0.82
    10
    $0.78
    $7.84
    100
    $0.74
    $74.25
    500
    $0.70
    $350.65
    1000
    $0.66
    $660.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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