IPD65R660CFD

IPD65R660CFD
Mfr. #:
IPD65R660CFD
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
Lifecycle:
New from this manufacturer.
Datasheet:
IPD65R660CFD Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD65R660CFD more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
660 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
22 nC
Pd - Power Dissipation:
63 W
Configuration:
Single
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS CFD2
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Part # Aliases:
IPD65R660CFDBTMA1 IPD65R66CFDXT SP000745024
Unit Weight:
0.139332 oz
Tags
IPD65R66, IPD65R6, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPD65R660CFDAATMA1
DISTI # V72:2272_06383438
Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 1000:$0.9281
  • 500:$1.0445
  • 250:$1.1414
  • 100:$1.2163
  • 25:$1.3913
  • 10:$1.4280
  • 1:$1.5952
IPD65R660CFDBTMA1
DISTI # IPD65R660CFDBTMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.6985
IPD65R660CFDATMA1
DISTI # IPD65R660CFDATMA1-ND
Infineon Technologies AGMOSFET N-CH 650V 6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.6985
IPD65R660CFDAATMA1
DISTI # IPD65R660CFDAATMA1-ND
Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8925
IPD65R660CFDAATMA1
DISTI # 31084167
Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2500
  • 1000:$0.9281
  • 500:$1.0445
  • 250:$1.1414
  • 100:$1.2163
  • 25:$1.3913
  • 10:$1.4280
  • 9:$1.5952
IPD65R660CFD
DISTI # IPD65R660CFD
Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: IPD65R660CFD)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 12500
  • 2500:$0.7614
  • 5000:$0.7301
  • 7500:$0.7203
  • 12500:$0.6922
  • 25000:$0.6833
  • 62500:$0.6663
  • 125000:$0.6500
IPD65R660CFD
DISTI # SP000745024
Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: SP000745024)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Europe - 0
  • 2500:€0.9999
  • 5000:€0.8389
  • 10000:€0.7009
  • 15000:€0.6109
  • 25000:€0.5719
IPD65R660CFDATMA1
DISTI # IPD65R660CFDATMA1
Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R660CFDATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.6529
  • 5000:$0.6299
  • 10000:$0.6069
  • 15000:$0.5859
  • 25000:$0.5759
IPD65R660CFDATMA2
DISTI # IPD65R660CFDATMA2
Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R660CFDATMA2)
RoHS: Compliant
Min Qty: 2500
Container: Reel
Americas - 0
    IPD65R660CFDATMA1
    DISTI # SP001117748
    Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: SP001117748)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 2500:€0.9929
    • 5000:€0.7749
    • 10000:€0.6929
    • 15000:€0.6299
    • 25000:€0.5909
    IPD65R660CFDBTMA1
    DISTI # SP000745024
    Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: SP000745024)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Europe - 0
    • 2500:€1.0199
    • 5000:€0.8559
    • 10000:€0.7149
    • 15000:€0.6229
    • 25000:€0.5829
    IPD65R660CFDAATMA1
    DISTI # IPD65R660CFDA
    Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R (Alt: IPD65R660CFDA)
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape and Reel
    Asia - 0
      IPD65R660CFDAATMA1
      DISTI # IPD65R660CFDAATMA1
      Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R660CFDAATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel
      Americas - 0
      • 2500:$0.8649
      • 5000:$0.8339
      • 10000:$0.8039
      • 15000:$0.7769
      • 25000:$0.7629
      IPD65R660CFDAATMA1
      DISTI # SP000928260
      Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R (Alt: SP000928260)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel
      Europe - 0
      • 2500:€0.9999
      • 5000:€0.8339
      • 10000:€0.7689
      • 15000:€0.7139
      • 25000:€0.6669
      IPD65R660CFDATMA1
      DISTI # 34AC1688
      Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.594ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes1878
      • 1:$1.4900
      • 10:$1.2700
      • 25:$1.1700
      • 50:$1.0700
      • 100:$0.9760
      • 250:$0.9190
      • 500:$0.8620
      • 1000:$0.6810
      IPD65R660CFDBTMA1
      DISTI # 13AC9050
      Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.594ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes2138
      • 1:$1.5800
      • 10:$1.3500
      • 25:$1.2200
      • 50:$1.1100
      • 100:$0.9280
      • 250:$0.8210
      • 500:$0.7130
      • 1000:$0.6840
      IPD65R660CFDInfineon Technologies AGPower Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant
      276527
      • 1000:$0.5500
      • 500:$0.5800
      • 100:$0.6100
      • 25:$0.6300
      • 1:$0.6800
      IPD65R660CFDBTMA1Infineon Technologies AGPower Field-Effect Transistor, 6A I(D), 650V, 0.66ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant
      67500
      • 1000:$0.5500
      • 500:$0.5800
      • 100:$0.6100
      • 25:$0.6300
      • 1:$0.6800
      IPD65R660CFD
      DISTI # 726-IPD65R660CFD
      Infineon Technologies AGMOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2
      RoHS: Compliant
      615
      • 1:$1.4900
      • 10:$1.2700
      • 100:$0.9760
      • 500:$0.8620
      IPD65R660CFDATMA1
      DISTI # 726-PD65R660CFDATMA1
      Infineon Technologies AGMOSFET LOW POWER_LEGACY
      RoHS: Compliant
      470
      • 1:$1.4900
      • 10:$1.2700
      • 100:$0.9760
      • 500:$0.8620
      • 1000:$0.6810
      • 2500:$0.6040
      IPD65R660CFDATMA2
      DISTI # 726-IPD65R660CFDATMA
      Infineon Technologies AGMOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and ther
      RoHS: Compliant
      0
      • 2500:$0.6040
      IPD65R660CFDA
      DISTI # 726-IPD65R660CFDA
      Infineon Technologies AGMOSFET N-Ch 650V 6A DPAK-2
      RoHS: Compliant
      2500
      • 1:$1.7700
      • 10:$1.5100
      • 100:$1.2100
      • 500:$1.0600
      • 1000:$0.8720
      • 2500:$0.8120
      IPD65R660CFDBTMA1
      DISTI # N/A
      Infineon Technologies AGMOSFET LOW POWER_LEGACY0
        IPD65R660CFDATMA1
        DISTI # 2784030
        Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252
        RoHS: Compliant
        2003
        • 5:£1.3300
        • 25:£1.2000
        • 100:£0.9240
        IPD65R660CFDBTMA1
        DISTI # 2726057
        Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252-3
        RoHS: Compliant
        2152
        • 5:£0.6890
        • 25:£0.6750
        • 100:£0.6610
        IPD65R660CFDATMA1
        DISTI # 2784030
        Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252
        RoHS: Compliant
        1878
        • 5:$2.1800
        IPD65R660CFDBTMA1
        DISTI # 2726057
        Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252-3
        RoHS: Compliant
        2138
        • 1:$2.1800
        • 10:$1.9000
        • 100:$1.5500
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        Availability
        Stock:
        540
        On Order:
        2523
        Enter Quantity:
        Current price of IPD65R660CFD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.48
        $1.48
        10
        $1.26
        $12.60
        100
        $0.98
        $97.50
        500
        $0.86
        $430.50
        1000
        $0.68
        $680.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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