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IPD65R660CFDATMA1

IPD65R660CFDATMA1
Mfr. #:
IPD65R660CFDATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET LOW POWER_LEGACY
Lifecycle:
New from this manufacturer.
Datasheet:
IPD65R660CFDATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPD65R660CFDATMA1 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
594 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
22 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
62.5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS CFDA
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
IPD65R660CFD SP001117748
Unit Weight:
0.139332 oz
Tags
IPD65R660CFDA, IPD65R66, IPD65R6, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPD65R660CFDATMA1
DISTI # V36:1790_06383961		Infineon Technologies AGTrans MOSFET N-CH 650V 6A Automotive 3-Pin(2+Tab) DPAK T/R0
  • 2500000:$0.5498
  • 1250000:$0.5501
  • 250000:$0.5866
  • 25000:$0.6551
  • 2500:$0.6668
IPD65R660CFDATMA1
DISTI # IPD65R660CFDATMA1-ND		Infineon Technologies AGMOSFET N-CH 650V 6A TO252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.6668
IPD65R660CFDATMA1
DISTI # IPD65R660CFDATMA1		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R660CFDATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5759
  • 15000:$0.5859
  • 10000:$0.6069
  • 5000:$0.6299
  • 2500:$0.6529
IPD65R660CFDATMA1
DISTI # SP001117748		Infineon Technologies AGTrans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R (Alt: SP001117748)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.5909
  • 15000:€0.6299
  • 10000:€0.6929
  • 5000:€0.7749
  • 2500:€0.9929
IPD65R660CFDATMA1
DISTI # 34AC1688		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.594ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power Dissipation RoHS Compliant: Yes0
  • 1000:$0.6880
  • 500:$0.8710
  • 250:$0.9280
  • 100:$0.9860
  • 50:$1.0800
  • 25:$1.1800
  • 10:$1.2800
  • 1:$1.4900
IPD65R660CFDATMA1
DISTI # 726-PD65R660CFDATMA1		Infineon Technologies AGMOSFET LOW POWER_LEGACY
RoHS: Compliant		0
  • 1:$1.4800
  • 10:$1.2700
  • 100:$0.9760
  • 500:$0.8620
  • 1000:$0.6810
  • 2500:$0.6040
  • 10000:$0.5810
IPD65R660CFDATMA1
DISTI # 2784030		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252100
  • 100:£0.9300
  • 10:£1.2800
  • 1:£1.6100
IPD65R660CFDATMA1
DISTI # 2784030		Infineon Technologies AGMOSFET, N-CH, 650V, 6A, TO-252
RoHS: Compliant		0
  • 5:$1.9900
Image Part # Description
LM4132AQ1MFT2.5

Mfr.#: LM4132AQ1MFT2.5

OMO.#: OMO-LM4132AQ1MFT2-5

 Voltage References Precision Low Dropout Voltage Reference
LM4132AQ1MFT2.5

Mfr.#: LM4132AQ1MFT2.5

OMO.#: OMO-LM4132AQ1MFT2-5-TEXAS-INSTRUMENTS

 Voltage References Automotive SOT23 Precision Low Dropout Voltage Reference 5-SOT-23 -40 to 125
Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of IPD65R660CFDATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.48
$1.48
10
$1.27
$12.70
100
$0.98
$97.60
500
$0.86
$431.00
1000
$0.68
$681.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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