IPD65R65

IPD65R650CEAUMA1 vs IPD65R650CE vs IPD65R650CEATMA1

 
PartNumberIPD65R650CEAUMA1IPD65R650CEIPD65R650CEATMA1
DescriptionMOSFET CONSUMERRF Bipolar Transistors MOSFET CONSUMER
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePG-TO-252-3--
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current10.1 A--
Rds On Drain Source Resistance650 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge23 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation86 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameCoolMOSCoolMOSCoolMOS
PackagingReelReelReel
Height2.3 mm--
Length6.5 mm--
SeriesCoolMOS CE--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Fall Time11 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time64 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesIPD65R650CE SP001396908--
Unit Weight0.011993 oz0.139332 oz0.139332 oz
Part Aliases-IPD65R650CEIPD65R650CE
Package Case-TO-252-3TO-252-3
Vds Drain Source Breakdown Voltage-650 V650 V
Rds On Drain Source Resistance-650 mOhms650 mOhms
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IPD65R650CEAUMA1 MOSFET CONSUMER
IPD65R650CE New and Original
Infineon Technologies
Infineon Technologies
IPD65R650CEAUMA1 MOSFET N-CH 650V 7A TO-252
IPD65R650CEATMA1 RF Bipolar Transistors MOSFET CONSUMER
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