PartNumber | IPD65R650CEAUMA1 | IPD65R650CE | IPD65R650CEATMA1 |
Description | MOSFET CONSUMER | RF Bipolar Transistors MOSFET CONSUMER | |
Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PG-TO-252-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | - | - |
Id Continuous Drain Current | 10.1 A | - | - |
Rds On Drain Source Resistance | 650 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 23 nC | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 86 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | CoolMOS CE | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Fall Time | 11 ns | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | - | - |
Rise Time | 8 ns | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 64 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Part # Aliases | IPD65R650CE SP001396908 | - | - |
Unit Weight | 0.011993 oz | 0.139332 oz | 0.139332 oz |
Part Aliases | - | IPD65R650CE | IPD65R650CE |
Package Case | - | TO-252-3 | TO-252-3 |
Vds Drain Source Breakdown Voltage | - | 650 V | 650 V |
Rds On Drain Source Resistance | - | 650 mOhms | 650 mOhms |