BSC031N06NS3 G

BSC031N06NS3 G
Mfr. #:
BSC031N06NS3 G
Manufacturer:
Infineon Technologies
Description:
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
Lifecycle:
New from this manufacturer.
Datasheet:
BSC031N06NS3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
BSC031N06NS3 G more Information
Product Attribute
Attribute Value
Manufacturer
INFINEON
Product Category
FETs - Single
Series
OptiMOS 3
Packaging
Reel
Part-Aliases
BSC031N06NS3GATMA1 BSC031N06NS3GXT SP000451482
Mounting-Style
SMD/SMT
Tradename
OptiMOS
Package-Case
TDSON-8
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single Quad Drain Triple Source
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
2.5 W
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
16 ns
Rise-Time
161 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
100 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistance
3.1 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
63 ns
Typical-Turn-On-Delay-Time
38 ns
Channel-Mode
Enhancement
Tags
BSC031N06NS3G, BSC031, BSC03, BSC0, BSC
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Part # Mfg. Description Stock Price
BSC031N06NS3 G
DISTI # 30610688
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
RoHS: Compliant
9995
  • 200:$1.2648
  • 100:$1.4280
  • 50:$1.6958
  • 10:$2.0655
  • 7:$4.0545
BSC031N06NS3GATMA1
DISTI # BSC031N06NS3GATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 100A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.9743
BSC031N06NS3GATMA1
DISTI # BSC031N06NS3GATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$1.1193
  • 500:$1.3508
  • 100:$1.7368
  • 10:$2.1610
  • 1:$2.3900
BSC031N06NS3GATMA1
DISTI # BSC031N06NS3GATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 100A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$1.1193
  • 500:$1.3508
  • 100:$1.7368
  • 10:$2.1610
  • 1:$2.3900
BSC031N06NS3 G
DISTI # C1S322000192300
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
RoHS: Compliant
9295
  • 2000:$0.8730
  • 200:$0.9920
  • 100:$1.1200
  • 50:$1.3300
  • 10:$1.6200
  • 1:$3.1800
BSC031N06NS3GXT
DISTI # BSC031N06NS3GATMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC031N06NS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.7849
  • 10000:$0.7559
  • 20000:$0.7289
  • 30000:$0.7049
  • 50000:$0.6919
BSC031N06NS3GATMA1
DISTI # 85X4151
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 139W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
  • 1:$2.0100
  • 10:$1.7100
  • 25:$1.6000
  • 50:$1.4800
  • 100:$1.3700
  • 250:$1.2900
  • 500:$1.2000
  • 1000:$0.9880
BSC031N06NS3 G
DISTI # 726-BSC031N06NS3G
Infineon Technologies AGMOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
RoHS: Compliant
0
  • 1:$2.0100
  • 10:$1.7100
  • 100:$1.3700
  • 500:$1.2000
  • 1000:$0.9880
BSC031N06NS3GATMA1
DISTI # 7545257P
Infineon Technologies AGMOSFET N-CHANNEL 60V 100A TDSON8, RL1
  • 50:£1.1250
  • 250:£0.8500
  • 1250:£0.6500
  • 2500:£0.6100
BSC031N06NS3GInfineon Technologies AGPower Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
Europe - 2510
    BSC031N06NS3GInfineon Technologies AG 1181
      BSC031N06NS3GATMA1
      DISTI # 2443369
      Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
      RoHS: Compliant
      0
      • 1:$3.1900
      • 10:$2.7100
      • 100:$2.1700
      • 500:$1.9100
      • 1000:$1.7500
      BSC031N06NS3GATMA1
      DISTI # 2443369RL
      Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
      RoHS: Compliant
      0
      • 1:$3.1900
      • 10:$2.7100
      • 100:$2.1700
      • 500:$1.9100
      • 1000:$1.7500
      BSC031N06NS3GATMA1
      DISTI # 2443369
      Infineon Technologies AGMOSFET, N CH, 60V, 100A, TDSON-8
      RoHS: Compliant
      90
      • 1:£1.1300
      • 10:£0.8960
      • 100:£0.7710
      BSC031N06NS3GInfineon Technologies AG60V,100A,N Channel Power MOSFET205
      • 1:$1.4300
      • 100:$1.1900
      • 500:$1.0500
      • 1000:$1.0200
      Image Part # Description
      BSC031N06NS3 G

      Mfr.#: BSC031N06NS3 G

      OMO.#: OMO-BSC031N06NS3-G

      MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3
      BSC031N06NS3

      Mfr.#: BSC031N06NS3

      OMO.#: OMO-BSC031N06NS3-1190

      New and Original
      BSC031N06NS3 G

      Mfr.#: BSC031N06NS3 G

      OMO.#: OMO-BSC031N06NS3-G-1190

      Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R
      BSC031N06NS3G

      Mfr.#: BSC031N06NS3G

      OMO.#: OMO-BSC031N06NS3G-1190

      Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      BSC031N06NS3GATMA1

      Mfr.#: BSC031N06NS3GATMA1

      OMO.#: OMO-BSC031N06NS3GATMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 60V 100A TDSON-8
      BSC031N06NS3GATMA1 , TDA

      Mfr.#: BSC031N06NS3GATMA1 , TDA

      OMO.#: OMO-BSC031N06NS3GATMA1-TDA-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      2500
      Enter Quantity:
      Current price of BSC031N06NS3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $1.30
      $1.30
      10
      $1.24
      $12.37
      100
      $1.17
      $117.18
      500
      $1.11
      $553.35
      1000
      $1.04
      $1 041.60
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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