STGWA8M120DF3

STGWA8M120DF3
Mfr. #:
STGWA8M120DF3
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
Lifecycle:
New from this manufacturer.
Datasheet:
STGWA8M120DF3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STGWA8M120DF3 more Information STGWA8M120DF3 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
IGBT Transistors
Technology:
Si
Package / Case:
TO-247-3
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
1.85 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
16 A
Pd - Power Dissipation:
167 W
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Series:
STGWA8M120DF3
Brand:
STMicroelectronics
Gate-Emitter Leakage Current:
250 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
600
Subcategory:
IGBTs
Tags
STGWA8, STGWA, STGW, STG
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
***ical
Trans IGBT Chip N-CH 1200V 16A 167000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 1.2Kv, 16A, To-247-3; Dc Collector Current:16A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:167W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
Part # Mfg. Description Stock Price
STGWA8M120DF3
DISTI # STGWA8M120DF3-ND
STMicroelectronicsIGBT
RoHS: Not compliant
Min Qty: 600
Container: Tube
Temporarily Out of Stock
  • 600:$2.3531
STGWA8M120DF3
DISTI # STGWA8M120DF3
STMicroelectronicsSTMSTGWA8M120DF3 - Trays (Alt: STGWA8M120DF3)
Min Qty: 600
Container: Tray
Americas - 0
  • 3000:$1.5900
  • 6000:$1.5900
  • 600:$1.6900
  • 1200:$1.6900
  • 1800:$1.6900
STGWA8M120DF3
DISTI # 14AC7542
STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:167W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes70
  • 500:$2.2700
  • 250:$2.5300
  • 100:$2.6700
  • 50:$2.8000
  • 25:$2.9400
  • 10:$3.0700
  • 1:$3.6200
STGWA8M120DF3
DISTI # 511-STGWA8M120DF3
STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss0
  • 1:$3.5800
  • 10:$3.0400
  • 100:$2.6400
  • 250:$2.5000
  • 500:$2.2500
  • 1000:$1.8900
  • 2500:$1.8000
STGWA8M120DF3
DISTI # IGBT2612
STMicroelectronicsIGBT 1200V8A 1,85VTO-247 LLStock DE - 0Stock HK - 0Stock US - 0
  • 600:$2.0100
STGWA8M120DF3
DISTI # 2729672
STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-3
RoHS: Compliant
70
  • 1000:$2.8400
  • 500:$3.0500
  • 250:$3.4300
  • 100:$3.8100
  • 10:$4.3000
  • 1:$4.9300
STGWA8M120DF3
DISTI # 2729672
STMicroelectronicsIGBT, SINGLE, 1.2KV, 16A, TO-247-370
  • 500:£1.7400
  • 250:£1.9400
  • 100:£2.0600
  • 10:£2.3700
  • 1:£3.1300
Image Part # Description
STGWA80H65FB

Mfr.#: STGWA80H65FB

OMO.#: OMO-STGWA80H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWA8M120DF3

Mfr.#: STGWA8M120DF3

OMO.#: OMO-STGWA8M120DF3

IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 8 A low loss
STGWA80H65DFB

Mfr.#: STGWA80H65DFB

OMO.#: OMO-STGWA80H65DFB

IGBT Transistors IGBT & Power Bipolar
STGWA80H65FB

Mfr.#: STGWA80H65FB

OMO.#: OMO-STGWA80H65FB-STMICROELECTRONICS

IGBT 650V 120A 469W TO247
STGWA8M120DF3

Mfr.#: STGWA8M120DF3

OMO.#: OMO-STGWA8M120DF3-STMICROELECTRONICS

STMSTGWA8M120DF3 - Trays (Alt: STGWA8M120DF3)
STGWA80H65DFB

Mfr.#: STGWA80H65DFB

OMO.#: OMO-STGWA80H65DFB-STMICROELECTRONICS

IGBT BIPO 650V 80A TO247-3
Availability
Stock:
Available
On Order:
4500
Enter Quantity:
Current price of STGWA8M120DF3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.58
$3.58
10
$3.04
$30.40
100
$2.64
$264.00
250
$2.50
$625.00
500
$2.25
$1 125.00
1000
$1.89
$1 890.00
2500
$1.80
$4 500.00
5000
$1.73
$8 650.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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