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SPB12N50C3ATMA1

SPB12N50C3ATMA1
Mfr. #:
SPB12N50C3ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 560V 11.6A TO-263
Lifecycle:
New from this manufacturer.
Datasheet:
SPB12N50C3ATMA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
SPB12N, SPB12, SPB1, SPB
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET Transistor, N Channel, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V
***ical
Trans MOSFET N-CH 500V 11.6A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:11.6A; On State Resistance:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***nell
MOSFET, N, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.6A; Drain Source Voltage Vds: 560V; On Resistance Rds(on): 0.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11.6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 560V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
Part # Mfg. Description Stock Price
SPB12N50C3ATMA1
DISTI # SPB12N50C3ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 560V 11.6A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    SPB12N50C3ATMA1
    DISTI # SPB12N50C3ATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 560V 11.6A TO-263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      SPB12N50C3ATMA1
      DISTI # SPB12N50C3ATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 560V 11.6A TO-263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        SPB12N50C3
        DISTI # SPB12N50C3ATMA1        		Infineon Technologies AGTrans MOSFET N-CH 500V 11.6A 3-Pin TO-263 T/R - Bulk (Alt: SPB12N50C3ATMA1)
        RoHS: Compliant
        Min Qty: 321
        Container: Bulk        		Americas - 0
        • 3210:$0.9909
        • 1605:$1.0089
        • 963:$1.0439
        • 642:$1.0829
        • 321:$1.1229
        SPB12N50C3
        DISTI # 726-SPB12N50C3        		Infineon Technologies AGMOSFET N-Ch 500V 11.6A D2PAK-2 CoolMOS C3
        RoHS: Compliant        		4
        • 1:$2.5600
        • 10:$2.1800
        • 100:$1.7400
        • 500:$1.5300
        • 1000:$1.2700
        SPB12N50C3ATMA1
        DISTI # N/A        		Infineon Technologies AGMOSFET LOW POWER_LEGACY0
          SPB12N50C3ATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant          		16739
          • 1000:$1.0300
          • 500:$1.0800
          • 100:$1.1300
          • 25:$1.1700
          • 1:$1.2600
          SPB12N50C3ATMA1
          DISTI # 2480729RL          		Infineon Technologies AGMOSFET, N-CH, 560V, 11.6A, TO-263-3
          RoHS: Compliant          		0
          • 1000:$1.9100
          • 500:$2.3100
          • 100:$2.6200
          • 10:$3.2900
          • 1:$3.8600
          SPB12N50C3ATMA1
          DISTI # 2480729          		Infineon Technologies AGMOSFET, N-CH, 560V, 11.6A, TO-263-3
          RoHS: Compliant          		0
          • 1000:$1.9100
          • 500:$2.3100
          • 100:$2.6200
          • 10:$3.2900
          • 1:$3.8600
          SPB12N50C3ATMA1
          DISTI # 2480729          		Infineon Technologies AGMOSFET, N-CH, 560V, 11.6A, TO-263-30
          • 500:£1.1700
          • 250:£1.2500
          • 100:£1.3300
          • 10:£1.6600
          • 1:£2.2100
          Image Part # Description
          SPB12N50C3

          Mfr.#: SPB12N50C3

          OMO.#: OMO-SPB12N50C3-1190

          		 Trans MOSFET N-CH 500V 11.6A 3-Pin TO-263 T/R - Bulk (Alt: SPB12N50C3ATMA1)
          SPB12N50C3ATMA1

          Mfr.#: SPB12N50C3ATMA1

          OMO.#: OMO-SPB12N50C3ATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 560V 11.6A TO-263
          SPB12N50C3_05

          Mfr.#: SPB12N50C3_05

          OMO.#: OMO-SPB12N50C3-05-1190

          		 New and Original
          Availability
          Stock:
          Available
          On Order:
          5000
          Enter Quantity:
          Current price of SPB12N50C3ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Reference price (USD)
          Quantity
          Unit Price
          Ext. Price
          1
          $1.54
          $1.54
          10
          $1.47
          $14.68
          100
          $1.39
          $139.05
          500
          $1.31
          $656.65
          1000
          $1.24
          $1 236.00
          Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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