FP35R12W2T4B11BOMA1

Mfr. #:: FP35R12W2T4B11BOMA1
Manufacturer:: Infineon Technologies
Description:: IGBT MODULE 1200V 35A
Lifecycle:: New from this manufacturer.
Datasheet:: FP35R12W2T4B11BOMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Tags: FP35R12W2, FP35R12W, FP35R, FP35, FP3

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FP35R12W2T4B11BOMA1 Description

***ical: Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin EASY2B-2 Tray

***et Europe: Trans IGBT Module N-CH 1.2KV 54A 23-Pin EASY2B-2

***Components: In a Box of 15, Infineon FP35R12W2T4B11BOMA1, EASY2B , N-Channel 3 Phase Bridge IGBT Module, 54 A max, 1200 V, PCB Mount

***i-Key: IGBT MODULE 1200V 35A

***ronik: 3PH-PIM 1200V 35A EasyPIM2BFit

***et: LOW POWER EASY

***ark: Igbt, Module, N-Ch, 1.2Kv, 54A; Transistor Polarity:n Channel; Dc Collector Current:54A; Collector Emitter Saturation Voltage Vce(On):1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. IGBT, MODULE, N-CH, 1.2KV, 54A; Transistor Polarity:N Channel; DC Collector Current:54A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:215W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:EconoPIM 2B Series; SVHC:No SVHC (27-Jun-2018)

***nell: IGBT, MODULO, CA-N, 1.2KV, 54A; Polarità Transistor:Canale N; Corrente di Collettore CC:54A; Tensione Saturaz Collettore-Emettitore Vce(on):1.85V; Dissipazione di Potenza Pd:215W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EconoPIM 2B Series; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: EasyPIM 2B 1200V PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology. | Summary of Features: High power density; Established Easy module concept; Integrated temperature sensor available; Low stray inductance module design; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; ups; aircon; medical; batterycharger; solar

Market price

Part #	Mfg.	Description	Stock	Price
FP35R12W2T4B11BOMA1 DISTI # V99:2348_18206007	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin Tray RoHS: Compliant	8	100:$37.4200 25:$39.0300 10:$39.9200 1:$42.3200
FP35R12W2T4B11BOMA1 DISTI # FP35R12W2T4B11BOMA1-ND	Infineon Technologies AG	IGBT MODULE 1200V 35A RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	10:$49.8800 1:$53.1000
FP35R12W2T4B11BOMA1 DISTI # 30345440	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin Tray RoHS: Compliant	8	1:$42.3200
FP35R12W2T4B11BOMA1 DISTI # FP35R12W2T4B11BOMA1	Infineon Technologies AG	LOW POWER EASY - Trays (Alt: FP35R12W2T4B11BOMA1) RoHS: Compliant Min Qty: 15 Container: Tray	Americas - 0	15:$44.0900 30:$42.4900 60:$40.9900 90:$39.5900 150:$38.8900
FP35R12W2T4B11BOMA1 DISTI # 34AC1528	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 54A,Transistor Polarity:N Channel,DC Collector Current:54A,Collector Emitter Saturation Voltage Vce(on):1.85V,Power Dissipation Pd:215W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes	1	1:$43.6800 5:$42.5100 10:$41.2900 25:$40.6800 50:$40.0800 100:$37.6800
FP35R12W2T4_B11 DISTI # 641-FP35R12W2T4_B11	Infineon Technologies AG	IGBT Modules IGBT 1200V 35A	0	1:$50.5700 5:$49.4400 10:$47.5100 25:$45.9700 100:$42.6100
FP35R12W2T4B11BOMA1 DISTI # 2781245	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 54A RoHS: Compliant	3	1:£42.2200 5:£40.3400 10:£38.5700
FP35R12W2T4B11BOMA1 DISTI # 2781245	Infineon Technologies AG	IGBT, MODULE, N-CH, 1.2KV, 54A RoHS: Compliant	0	1:$78.2400 5:$76.7600 10:$72.6500 50:$70.1400
FP35R12W2T4B11BOMA1 DISTI # C1S322000680948	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 54A 215000mW 23-Pin EASY2B-2 Tray RoHS: Compliant	8	1:$40.2000

Related products

Image	Part #	Description
	Mfr.#: FP35R12W2T4PB11BPSA1 OMO.#: OMO-FP35R12W2T4PB11BPSA1	IGBT Modules BOND MODULE
	Mfr.#: FP35R12W2T4_B11 OMO.#: OMO-FP35R12W2T4-B11	IGBT Modules IGBT 1200V 35A
	Mfr.#: FP35R12W2T4PBPSA1 OMO.#: OMO-FP35R12W2T4PBPSA1	IGBT Modules BOND MODULE
	Mfr.#: FP35R12W2T4 PB-FRE OMO.#: OMO-FP35R12W2T4-PB-FRE-1190	New and Original
	Mfr.#: FP35R12W2T4-B11 OMO.#: OMO-FP35R12W2T4-B11-1190	New and Original
	Mfr.#: FP35R12W2T4B11BOMA1 OMO.#: OMO-FP35R12W2T4B11BOMA1-INFINEON-TECHNOLOGIES	IGBT MODULE 1200V 35A
	Mfr.#: FP35R12W2T4PB11BPSA1 OMO.#: OMO-FP35R12W2T4PB11BPSA1-INFINEON-TECHNOLOGIES	MOD IGBT LOW PWR EASY2B-2
	Mfr.#: FP35R12W2T4_B11 OMO.#: OMO-FP35R12W2T4-B11-125	IGBT Modules IGBT 1200V 35A
	Mfr.#: FP35R12W2T4 OMO.#: OMO-FP35R12W2T4-125	IGBT Modules IGBT-MODULE
	Mfr.#: FP35R12W2T4BOMA1 OMO.#: OMO-FP35R12W2T4BOMA1-INFINEON-TECHNOLOGIES	Trans IGBT Module N-CH 1200V 54A 215000mW Tray

Availability

Stock:: Available
On Order:: 1500
Enter Quantity:

Current price of FP35R12W2T4B11BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$54.74~~; ~~$54.74~~

10: ~~$52.00~~; ~~$519.98~~

100: ~~$49.26~~; ~~$4 926.15~~

500: ~~$46.52~~; ~~$23 262.40~~

1000: ~~$43.79~~; ~~$43 788.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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FP35R12W2T4B11BOMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes