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STD7NM80-1

STD7NM80-1
Mfr. #:
STD7NM80-1
Manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 800V 6.5A IPAK
Lifecycle:
New from this manufacturer.
Datasheet:
STD7NM80-1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STD7NM80-1 more Information STD7NM80-1 Product Details
Product Attribute
Attribute Value
Manufacturer
STMicroelectronics
Product Category
Transistors - FETs, MOSFETs - Single
RoHS
Details
Mounting Style
Through Hole
Package / Case
IPAK-3
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
800 V
Id - Continuous Drain Current
6.5 A
Rds On - Drain-Source Resistance
1.05 Ohms
Vgs - Gate-Source Voltage
30 V
Qg - Gate Charge
18 nC
Maximum Operating Temperature
+ 150 C
Technology
Si
Packaging
Tube
Channel Mode
Enhancement
Brand
STMicroelectronics
Configuration
Single
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Pd - Power Dissipation
90 W
Rise Time
8 ns
Series
N-channel MDmesh
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
20 ns
Unit Weight
0.139332 oz
Tags
STD7NM8, STD7NM, STD7N, STD7, STD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
MDMesh™ N-Channel Power MOSFETs
STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.Learn More
Part # Mfg. Description Stock Price
STD7NM80-1
DISTI # V79:2366_19875537		STMicroelectronicsTrans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		15000
  • 100:$1.7478
  • 25:$1.8762
  • 10:$2.0802
  • 1:$2.3357
STD7NM80-1
DISTI # V36:1790_06559915		STMicroelectronicsTrans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		299
  • 100:$1.7478
  • 25:$1.8762
  • 10:$2.0802
  • 1:$2.3357
STD7NM80-1
DISTI # 497-12787-5-ND		STMicroelectronicsMOSFET N-CH 800V 6.5A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 5025:$1.3948
  • 2550:$1.4422
  • 1050:$1.5369
  • 525:$1.8210
  • 150:$2.2946
  • 75:$2.5313
  • 1:$3.1000
STD7NM80-1
DISTI # 26709587		STMicroelectronicsTrans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		15000
  • 100:$1.8789
  • 25:$2.0169
  • 10:$2.2362
  • 6:$2.5109
STD7NM80-1
DISTI # 27615546		STMicroelectronicsTrans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		1950
  • 1950:$0.7347
STD7NM80-1
DISTI # 27614075		STMicroelectronicsTrans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		299
  • 100:$1.8789
  • 25:$2.0169
  • 10:$2.2362
  • 6:$2.5109
STD7NM80-1
DISTI # STD7NM80-1		STMicroelectronicsTrans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) IPAK Tube (Alt: STD7NM80-1)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1:€2.1300
  • 25:€1.8500
  • 100:€1.6600
  • 250:€1.4600
  • 500:€1.3300
  • 800:€1.1400
  • 3000:€1.0700
STD7NM80-1
DISTI # STD7NM80-1		STMicroelectronicsTrans MOSFET N-CH 800V 6.5A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STD7NM80-1)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$1.2899
  • 6000:$1.2299
  • 12000:$1.1739
  • 18000:$1.1219
  • 30000:$1.0989
STD7NM80-1
DISTI # 57P0819		STMicroelectronicsMOSFET, N CH, 800V, 6.5A, IPAK ,Transistor Polarity:N Channel,Continuous Drain Current Id:6.5A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.95ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:3PinsRoHS Compliant: Yes0
  • 2500:$1.1800
  • 1000:$1.3000
  • 500:$1.5000
  • 250:$1.6300
  • 100:$1.9300
  • 25:$2.1000
  • 10:$2.4400
  • 1:$2.7100
STD7NM80-1
DISTI # 511-STD7NM80-1		STMicroelectronicsMOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A
RoHS: Compliant		0
    STD7NM80-1
    DISTI # 7612717P    		STMicroelectronicsMOSFET N-CHANNEL 800V 6.5A IPAK, TU1391
    • 10:£0.4600
    STD7NM80-1
    DISTI # TMOSP10741    		STMicroelectronicsN-CH 700V 6,5A 1,05Ohm TO251-3Stock DE - 0Stock HK - 0Stock US - 0
    • 75:$1.0028
    • 150:$0.9455
    • 300:$0.8882
    • 450:$0.8023
    • 750:$0.7736
    STD7NM801STMicroelectronicsPower Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
    RoHS: Compliant    		Europe - 1500
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      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of STD7NM80-1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.95
      $0.95
      10
      $0.90
      $9.00
      100
      $0.85
      $85.21
      500
      $0.80
      $402.40
      1000
      $0.76
      $757.40
      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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