BSM50GB120DN2

Mfr. #:: BSM50GB120DN2
Manufacturer:: Infineon Technologies
Description:: IGBT Modules 1200V 50A DUAL
Lifecycle:: New from this manufacturer.
Datasheet:: BSM50GB120DN2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: IGBT Modules

RoHS:: Y

Product:: IGBT Silicon Modules

Configuration:: Half Bridge

Collector- Emitter Voltage VCEO Max:: 1200 V

Collector-Emitter Saturation Voltage:: 2.5 V

Continuous Collector Current at 25 C:: 78 A

Gate-Emitter Leakage Current:: 200 nA

Pd - Power Dissipation:: 400 W

Package / Case:: Half Bridge1

Minimum Operating Temperature:: - 40 C

Maximum Operating Temperature:: + 150 C

Packaging:: Tray

Height:: 30.5 mm

Length:: 94 mm

Width:: 34 mm

Brand:: Infineon Technologies

Mounting Style:: Chassis Mount

Maximum Gate Emitter Voltage:: 20 V

Product Type:: IGBT Modules

Factory Pack Quantity:: 10

Subcategory:: IGBTs

Part # Aliases:: BSM50GB120DN2HOSA1 SP000095922

Tags: BSM50GB120DN2, BSM50GB120DN, BSM50GB120D, BSM50GB120, BSM50GB12, BSM50GB1, BSM50GB, BSM50G, BSM5, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM50GB120DN2 Description

***ser: IGBT - Standard Modules 1200V, 50A, DUAL

***nell: IGBT MODULE, DUAL, 1200V; Transistor type:Series IGBT(Half bridge) + Freewheel Diodes; Voltage, Vces:1200V; Current, Ic continuous a max:50A; Voltage, Vce sat max:3V; Power dissipation:400W; Case style:Half Bridge 1; Case style, alternate:M34a; Current, Icm pulsed:100A; Power, Pd:400W; Temperature, current:80°C; Termination Type:Screw; Time, fall:100ns; Time, rise:100ns; Voltage, Vceo:1200V

Market price

Part #	Mfg.	Description	Stock	Price
BSM50GB120DN2HOSA1 DISTI # V36:1790_18204614	Infineon Technologies AG	BSM50GB120DN2HOSA1	0	10000:$57.2200 5000:$57.2300 1000:$60.7800 100:$70.0100 10:$71.7600
BSM50GB120DN2HOSA1 DISTI # BSM50GB120DN2HOSA1-ND	Infineon Technologies AG	IGBT 2 MED POWER 34MM-1 Min Qty: 10 Container: Tray	Limited Supply - Call	10:$71.7560
BSM50GB120DN2 DISTI # SP000095922	Infineon Technologies AG	Trans IGBT Module N-CH 1200V 78A ±20V Screw Mount (Alt: SP000095922) Min Qty: 1	Europe - 691
BSM 50 GB 120 DN2 DISTI # BSM50GB120DN2	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 78A 7-Pin 34mm (Alt: BSM50GB120DN2) RoHS: Compliant Min Qty: 10	Asia - 0	500:$59.7570 250:$60.5231 100:$61.3091 50:$62.1158 30:$63.7946 20:$65.5667 10:$67.4400
BSM50GB120DN2HOSA1 DISTI # BSM50GB120DN2HOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 50A nom - Trays (Alt: BSM50GB120DN2HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0
BSM50GB120DN2 DISTI # 641-BSM50GB120DN2	Infineon Technologies AG	IGBT Modules 1200V 50A DUAL RoHS: Compliant	0
BSM50GB120DN2HOSA1 DISTI # XSKDRABV0052102	Infineon Technologies AG	RoHS: Compliant	547 in Stock0 on Order	547:$82.3500 10:$88.2400
BSM50GB120DN2 DISTI # 1496954	Infineon Technologies AG	IGBT MODULE, DUAL, 1200V RoHS: Compliant	0	100:$98.9000 25:$106.7100 10:$108.8500 5:$111.7400 1:$113.8400

Related products

Image	Part #	Description
	Mfr.#: BSM50GB60DLC OMO.#: OMO-BSM50GB60DLC	IGBT Modules 600V 50A DUAL
	Mfr.#: BSM50GB120DN2 OMO.#: OMO-BSM50GB120DN2	IGBT Modules 1200V 50A DUAL
	Mfr.#: BSM50GA120D OMO.#: OMO-BSM50GA120D-1190	New and Original
	Mfr.#: BSM50GB100DN1 OMO.#: OMO-BSM50GB100DN1-1190	New and Original
	Mfr.#: BSM50GB120N2 OMO.#: OMO-BSM50GB120N2-1190	Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel
	Mfr.#: BSM50GP120BOSA1 OMO.#: OMO-BSM50GP120BOSA1-INFINEON-TECHNOLOGIES	IGBT MODULE 1200V 50A
	Mfr.#: BSM50GX120DN2 OMO.#: OMO-BSM50GX120DN2-1190	Trans IGBT Module N-CH 1.2kV 50A nom 36-Pin (Alt: SP000100372)
	Mfr.#: BSM50GD120DLCBOSA1 OMO.#: OMO-BSM50GD120DLCBOSA1-INFINEON-TECHNOLOGIES	Trans IGBT Module N-CH
	Mfr.#: BSM50GP60GBOSA1 OMO.#: OMO-BSM50GP60GBOSA1-INFINEON-TECHNOLOGIES	IGBT 2 LOW POWER ECONO3-3
	Mfr.#: BSM50GX120DN2BOSA1 OMO.#: OMO-BSM50GX120DN2BOSA1-INFINEON-TECHNOLOGIES	LOW POWER ECONO

Availability

Stock:: Available
On Order:: 2000
Enter Quantity:

Current price of BSM50GB120DN2 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$75.54~~; ~~$75.54~~

5: ~~$74.15~~; ~~$370.75~~

10: ~~$72.23~~; ~~$722.30~~

25: ~~$70.81~~; ~~$1 770.25~~

100: ~~$65.63~~; ~~$6 563.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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BSM50GB120DN2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes