IPB64N25S320ATMA1

Mfr. #:: IPB64N25S320ATMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 250V 64A D2PAK-2
Lifecycle:: New from this manufacturer.
Datasheet:: IPB64N25S320ATMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IPB64N25S320ATMA1 Datasheet IPB64N25S320ATMA1 Datasheet (P4-P6)IPB64N25S320ATMA1 Datasheet (P7-P9)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 250 V

Id - Continuous Drain Current:: 64 A

Rds On - Drain-Source Resistance:: 17.5 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 89 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 300 W

Configuration:: Single

Channel Mode:: Enhancement

Qualification:: AEC-Q101

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: XPB64N25

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 20 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 45 ns

Typical Turn-On Delay Time:: 18 ns

Part # Aliases:: IPB64N25S3-20 IPB64N25S32XT SP000876596

Unit Weight:: 0.068654 oz

Tags: IPB6, IPB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB64N25S320ATMA1 Description

***Components: On a Reel of 1000, N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1

***p One Stop Japan: Trans MOSFET N-CH 250V 64A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: IPB64N25S3 Series 250 V 20 mOhm 64 A OptiMOS®-T Power-Transistor - PG-TO-263-3

***et Europe: Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R

***ical: Trans MOSFET 250V 64A Automotive

***i-Key: MOSFET N-CH 250V 64A TO263-3

***ronik: N-CH 250V 64A 20mOhm TO263-3

***ark: Mosfet, Aec-Q101, N-Ch, 250V, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:250V; On Resistance Rds(On):0.0175Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ment14 APAC: MOSFET, AEC-Q101, N-CH, 250V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.0175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS T Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, AEC-Q101, N-CH, 250V, TO-263; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:64A; Napięcie drenu / źródła Vds:250V; Rezystancja przewodzenia Rds(on):0.0175ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:300W; Rodzaj obudowy tranzystora:TO-263; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:175°C; Asortyment produktów:OptiMOS T Series; Kwalifikacja motoryzacyjna:AEC-Q101; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018)

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: low RDS (on) in trench technology- down to 19.3 mOhm; highest current capability 64A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: Hybrid inverter; DC/DC; Piezo Injection

Market price

Part #	Mfg.	Description	Stock	Price
IPB64N25S320ATMA1 DISTI # IPB64N25S320ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$3.7122
IPB64N25S320ATMA1 DISTI # IPB64N25S320ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$4.5336 100:$5.5988 10:$6.8280 1:$7.6500
IPB64N25S320ATMA1 DISTI # IPB64N25S320ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 64A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$4.5336 100:$5.5988 10:$6.8280 1:$7.6500
IPB64N25S320ATMA1 DISTI # IPB64N25S320ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB64N25S320ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.3900 2000:$3.2900 4000:$3.1900 6000:$3.0900 10000:$2.9900
IPB64N25S320ATMA1 DISTI # SP000876596	Infineon Technologies AG	Trans MOSFET N-CH 250V 64A 3-Pin TO-263 T/R (Alt: SP000876596) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€3.0900 2000:€2.9900 4000:€2.9900 6000:€2.7900 10000:€2.6900
IPB64N25S320ATMA1 DISTI # 13AC9030	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 250V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:64A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	0	1:$6.3900 10:$5.4300 25:$5.1900 50:$4.9500 100:$4.7100 250:$4.4600 500:$4.0100 1000:$3.3800
IPB64N25S3-20 DISTI # 726-IPB64N25S3-20	Infineon Technologies AG	MOSFET N-Ch 250V 64A D2PAK-2 RoHS: Compliant	42	1:$6.3900 10:$5.4300 100:$4.7100 250:$4.4600 500:$4.0100 1000:$3.3800
IPB64N25S320ATMA1 DISTI # 726-IPB64N25S320ATMA	Infineon Technologies AG	MOSFET N-Ch 250V 64A D2PAK-2 RoHS: Compliant	0	1:$6.3900 10:$5.4300 100:$4.7100 250:$4.4600 500:$4.0100 1000:$3.3800
IPB64N25S320ATMA1 DISTI # 1702295	Infineon Technologies AG	MOSFET N-CH 250V 64A OPTIMOS-T D2PAK, RL	1000	1000:£2.3840 2000:£2.3050
IPB64N25S320ATMA1 DISTI # 2725843	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 250V, TO-263 RoHS: Compliant	0	1:$12.2000 10:$10.8900 100:$8.9300 500:$7.2300
IPB64N25S320ATMA1 DISTI # 2725843	Infineon Technologies AG	MOSFET, AEC-Q101, N-CH, 250V, TO-263 RoHS: Compliant	0	1:£4.4800 10:£4.0000 100:£3.4200 250:£3.2400 500:£2.9900

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Availability

Stock:: 900
On Order:: 2883
Enter Quantity:

Current price of IPB64N25S320ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$6.38~~; ~~$6.38~~

10: ~~$5.42~~; ~~$54.20~~

100: ~~$4.70~~; ~~$470.00~~

250: ~~$4.46~~; ~~$1 115.00~~

500: ~~$4.00~~; ~~$2 000.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes