IPI029N06NAKSA1

IPI029N06NAKSA1
Mfr. #:
IPI029N06NAKSA1
Manufacturer:
Infineon Technologies
Description:
Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3
Lifecycle:
New from this manufacturer.
Datasheet:
IPI029N06NAKSA1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
IPI029N06NAKSA1 more Information
Product Attribute
Attribute Value
Manufacturer
Infineon Technologies
Product Category
Transistors - FETs, MOSFETs - Single
Series
IPI029N06
Packaging
Tube
Part-Aliases
IPI029N06N IPI029N06NXK SP000962134
Unit-Weight
0.084199 oz
Mounting-Style
Through Hole
Tradename
OptiMOS
Package-Case
TO-262-3
Technology
Si
Number-of-Channels
1 Channel
Configuration
Single
Transistor-Type
1 N-Channel
Pd-Power-Dissipation
136 W
Maximum-Operating-Temperature
+ 175 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
8 ns
Rise-Time
15 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
100 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
2.8 V
Rds-On-Drain-Source-Resistance
2.9 mOhms
Transistor-Polarity
N-Channel
Typical-Turn-Off-Delay-Time
30 ns
Typical-Turn-On-Delay-Time
17 ns
Qg-Gate-Charge
56 nC
Forward-Transconductance-Min
160 S
Tags
IPI02, IPI0, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
***p One Stop Global
Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262
***et
Trans MOSFET N-CH 60V 100A 3-Pin TO-262 Tube
***i-Key
MOSFET N-CH 60V 24A TO262-3
***ronik
N-CH 60V 100A 2,9mOhm TO262-3
***ark
Mosfet, N-Ch, 60V, 100A, To-262; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0027Ohm; Rds(On) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:2.8V; Threshold Voltage Vgs:10V; Power Dissipation Pd:136W; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:OptiMOS 5 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 60V, 100A, TO-262; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0027ohm; Tensione Vgs di Misura Rds(on):2.8V; Tensione di Soglia Vgs:10V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
Part # Mfg. Description Stock Price
IPI029N06NAKSA1
DISTI # 29709233
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
1000
  • 500:$1.0464
  • 100:$1.1904
  • 15:$1.4880
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1-ND
Infineon Technologies AGMOSFET N-CH 60V 24A TO262-3
RoHS: Compliant
Min Qty: 1
Container: Tube
417In Stock
  • 1000:$0.9870
  • 500:$1.1912
  • 100:$1.5315
  • 10:$1.9060
  • 1:$2.1100
IPI029N06NAKSA1
DISTI # C1S322000334748
Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
1000
  • 1000:$0.9020
  • 500:$1.1700
  • 100:$1.2800
  • 25:$1.5600
  • 5:$1.9200
IPI029N06NAKSA1
DISTI # SP000962134
Infineon Technologies AGMV POWER MOS (Alt: SP000962134)
RoHS: Compliant
Min Qty: 1
Europe - 56000
  • 1:€1.2629
  • 10:€0.9849
  • 25:€0.8799
  • 50:€0.8009
  • 100:€0.7769
  • 500:€0.7609
  • 1000:€0.7509
IPI029N06NAKSA1
DISTI # IPI029N06NAKSA1
Infineon Technologies AGMV POWER MOS - Rail/Tube (Alt: IPI029N06NAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$0.7129
  • 1000:$0.6869
  • 2000:$0.6619
  • 3000:$0.6399
  • 5000:$0.6279
IPI029N06NAKSA1
DISTI # 34AC1699
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0027ohm,Rds(on) Test Voltage Vgs:2.8V,Threshold Voltage Vgs:10V,Power RoHS Compliant: Yes459
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
IPI029N06NAKSA1Infineon Technologies AGPower Field-Effect Transistor, 24A I(D), 60V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
20868
  • 1000:$1.1200
  • 500:$1.1800
  • 100:$1.2300
  • 25:$1.2800
  • 1:$1.3800
IPI029N06N
DISTI # 726-IPI029N06N
Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant
485
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
IPI029N06NAKSA1
DISTI # 726-IPI029N06NAKSA1
Infineon Technologies AGMOSFET N-Ch 60V 100A I2PAK-3
RoHS: Compliant
315
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
IPI029N06NAKSA1
DISTI # 2781091
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262
RoHS: Compliant
459
  • 1:£1.9300
  • 10:£1.5300
  • 100:£1.2300
  • 250:£1.0900
  • 500:£0.9560
IPI029N06NAKSA1
DISTI # 2781091
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-262
RoHS: Compliant
459
  • 1:$3.4000
  • 10:$2.9600
  • 100:$2.4100
  • 250:$2.0400
  • 500:$1.7600
  • 1000:$1.6700
IPI029N06NAKSA1
DISTI # XSKDRABV0021253
INF 
RoHS: Compliant
500
  • 500:$1.4600
Image Part # Description
IPI029N06N

Mfr.#: IPI029N06N

OMO.#: OMO-IPI029N06N

MOSFET N-Ch 60V 100A I2PAK-3
IPI029N06NAKSA1

Mfr.#: IPI029N06NAKSA1

OMO.#: OMO-IPI029N06NAKSA1

MOSFET N-Ch 60V 100A I2PAK-3
IPI029N06N

Mfr.#: IPI029N06N

OMO.#: OMO-IPI029N06N-1190

MOSFET N-Ch 60V 100A I2PAK-3
IPI029N06NAKSA1

Mfr.#: IPI029N06NAKSA1

OMO.#: OMO-IPI029N06NAKSA1-INFINEON-TECHNOLOGIES

Darlington Transistors MOSFET N-Ch 60V 100A I2PAK-3
Availability
Stock:
Available
On Order:
5000
Enter Quantity:
Current price of IPI029N06NAKSA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.94
$0.94
10
$0.89
$8.95
100
$0.85
$84.77
500
$0.80
$400.30
1000
$0.75
$753.50
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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