SIHB065N60E-GE3

SIHB065N60E-GE3
Mfr. #:
SIHB065N60E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 650V Vds; 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB065N60E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHB065N60E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
65 mOhms
Vgs th - Gate-Source Threshold Voltage:
3 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
74 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
250 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Series:
E
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
12 S
Fall Time:
13 ns
Product Type:
MOSFET
Rise Time:
46 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
54 ns
Typical Turn-On Delay Time:
28 ns
Tags
SIHB, SIH
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHB065N60E-GE3
DISTI # V72:2272_22759357
Vishay IntertechnologiesE Series Power MOSFET D2PAK (TO-263), 65 m @ 10V0
    SIHB065N60E-GE3
    DISTI # SIHB065N60E-GE3-ND
    Vishay SiliconixMOSFET E SERIES 600V D2PAK (TO-2
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    9In Stock
    • 1000:$3.8811
    • 100:$5.1173
    • 25:$5.8936
    • 10:$6.1810
    • 1:$6.8400
    SIHB065N60E-GE3
    DISTI # SIHB065N60E-GE3
    Vishay Intertechnologies(Alt: SIHB065N60E-GE3)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€3.0900
    • 500:€3.1900
    • 50:€3.2900
    • 100:€3.2900
    • 25:€3.6900
    • 10:€4.5900
    • 1:€5.7900
    SIHB065N60E-GE3
    DISTI # SIHB065N60E-GE3
    Vishay Intertechnologies- Tape and Reel (Alt: SIHB065N60E-GE3)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
    • 10000:$3.4900
    • 6000:$3.5900
    • 4000:$3.6900
    • 2000:$3.7900
    • 1000:$3.8900
    SIHB065N60E-GE3
    DISTI # 07AH6938
    Vishay IntertechnologiesMOSFET, N-CH, 40A, 600V, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:40A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.057ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes46
    • 500:$4.2800
    • 250:$4.7000
    • 100:$5.1100
    • 50:$5.3900
    • 25:$5.6700
    • 10:$6.2200
    • 1:$6.9100
    SIHB065N60E-GE3
    DISTI # 78-SIHB065N60E-GE3
    Vishay IntertechnologiesMOSFET 650V Vds,30V Vgs D2PAK (TO-263)
    RoHS: Compliant
    5
    • 1:$6.8400
    • 10:$6.1600
    • 25:$5.6100
    • 100:$5.0600
    • 250:$4.6500
    • 500:$4.2400
    • 1000:$3.6900
    • 2000:$3.5500
    SIHB065N60E-GE3
    DISTI # 3019074
    Vishay IntertechnologiesMOSFET, N-CH, 40A, 600V, TO-263
    RoHS: Compliant
    1
    • 250:$4.8500
    • 100:$5.4300
    • 50:$5.9300
    • 10:$6.4000
    • 5:$7.7000
    • 1:$8.4300
    SIHB065N60E-GE3
    DISTI # 3019074
    Vishay IntertechnologiesMOSFET, N-CH, 40A, 600V, TO-2631
    • 100:£3.7800
    • 50:£3.9900
    • 10:£4.2000
    • 5:£5.1200
    • 1:£5.6000
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    OMO.#: OMO-157D

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    0501020.WR

    Mfr.#: 0501020.WR

    OMO.#: OMO-0501020-WR-LITTELFUSE

    Surface Mount Fuses 32V 20A 1206 High Current 1206
    0451010.NRL

    Mfr.#: 0451010.NRL

    OMO.#: OMO-0451010-NRL-LITTELFUSE

    Surface Mount Fuses 125V 10A V/FA NANO2 W/Au CAPS
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    Mfr.#: APT77N60SC6

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    OMO.#: OMO-157D-HAMMOND-MANUFACTURING

    Common Mode Filters / Chokes D.C. FILTER
    Availability
    Stock:
    Available
    On Order:
    1984
    Enter Quantity:
    Current price of SIHB065N60E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $6.84
    $6.84
    10
    $6.16
    $61.60
    25
    $5.61
    $140.25
    100
    $5.06
    $506.00
    250
    $4.65
    $1 162.50
    500
    $4.24
    $2 120.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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